Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys

Das, Sarita; Broderick, Christopher A.; O’Reilly, Eoin P.

doi:10.1103/physrevapplied.17.014029

Cited by 2 publications

(1 citation statement)

References 86 publications

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“…The left-and right-hand panels of figure 1(a) respectively show the imaginary and real parts of k z associated with each bulk state at energy E. Note that we have omitted HH bands from figures 1(a) and (b) for simplicity, since the HH band decouples from the CB, LH and SO bands along [001] and is hence not relevant to the present discussion. Calculation of the bulk CB, LH and SO complex band dispersiondescribed in detail in the supplemental information, which cites [7,49,50,71] and [73][74][75][76][77]-is performed based on a reduced 3-band Hamiltonian that appears in the blockdiagonalised 8-band Hamiltonian along [001] [49,50]…”

Section: Technical Considerations: Choice Of Materials Parameters And...mentioning

confidence: 99%

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Murphy,

O’Reilly,

Broderick

2023

J. Phys. D: Appl. Phys.

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We present a theoretical analysis of mid-infrared radiative recombination in InAs/GaSb superlattices (SLs). We employ a semi-analytical plane wave expansion method in conjunction with an 8-band k·p Hamiltonian to compute the SL electronic structure, paying careful attention to the identification and mitigation of spurious solutions. The calculated SL eigenstates are used directly to compute spontaneous emission spectra and the radiative recombination coefficient B. We elucidate the origin of the relatively large B coefficients in InAs/GaSb SLs which, despite the presence of spatiallyindirect (type-II-like) carrier confinement, are close to that of bulk InAs and compare favourably to those calculated for mid-infrared type-I pseudomorphic and metamorphic quantum well structures having comparable emission wavelengths. Our analysis explicitly quantifies the roles played by carrier localisation (specifically, partial delocalisation of bound electron states) and miniband formation (specifically, miniband occupation and optical selection rules) in determining the magnitude of B and its temperature dependence. We perform a high-throughput optimisation of the room temperature B coefficient in InAs/GaSb SLs across the 3.5 – 7 μm wavelength range, quantifying the dependence of B on the relative thickness of the electron-confining InAs and hole-confining GaSb layers. This analysis provides guidance for the growth of optimised SLs for mid-infrared light emitters. Our results, combined with the expected low non-radiative Auger recombination rates in structures having spatially indirect electron and hole confinement, corroborate recently observed high output power in prototype InAs/GaSb SL inter-band cascade light-emitting diodes.

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Section: Technical Considerations: Choice Of Materials Parameters And...mentioning

confidence: 99%

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Murphy,

O’Reilly,

Broderick

2023

J. Phys. D: Appl. Phys.

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Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

Aydin,

Bork,

Zide

et al. 2024

Physica B: Condensed Matter

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Impact of Band Anticrossing on Band-to-Band Tunneling in Highly Mismatched Semiconductor Alloys

Cited by 2 publications

References 86 publications

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Theory and optimisation of radiative recombination in broken-gap InAs/GaSb superlattices

Electric field dependence of the electron drift velocity in n-type InxGa1-xAs1-yBiy epilayer

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