Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS

Abstract

We report the hot carrier reliability (HCR) of 45-nm SOI CMOS technology. Body contacted devices are shown to be more reliable than floating-body devices. Two different body-contacting schemes are investigated (T-body and notched T-body). The effects of total dose irradiation on reliability are investigated. Body contacted devices are shown to be more tolerant to radiation than floating-body devices. Asymmetric halo doping devices show less hot carrier degradation than symmetric halo doping devices. In addition, we investigate the dependence of hot carrier reliability on the metal contact spacing of the Source/Drain (S/D) terminals, the PC-PC spacing, and the RF device performance trade-offs that result.

Common‐rail powered reliability improving technique for single‐supply complementary metal oxide semiconductor amplifiers

“…The objective of including a reliability improving circuit (RIC) in a CMOS architecture is to reduce variation in the system's figures of merit (FOM). Recent literature has addressed this issue for various radio frequency (RF), digital and digital-to-analog-conversion (DAC) circuits [5,[16][17][18][19][20][21][22][23][24][25][26][27][28][29]. For example, a reliability-sensitive power amplifier is presented in [5] which can be integrated with a wireless fidelity receiver to mitigate discharge/aging issues.…”

“…For example, a reliability-sensitive power amplifier is presented in [5] which can be integrated with a wireless fidelity receiver to mitigate discharge/aging issues. The dependence of hot carrier reliability (HCR) on contact spacing (source/drain) and its subsequent effect on device behaviour in a radiation environment have been discussed in [16]. A compact model for transistor degradation because of channel hot carriers and thermal instability is proposed in [17].…”