Impact of boron in ultraviolet quantum well-based light emitting diodes
G. Dhivyasri,
M. Manikandan,
J. Ajayan
et al.
Abstract:The ByAlxGa1-x–yN system validates promise as a suitable option for fabricating opto-electronic devices like Light-Emitting-Diodes (LEDs) & laser diodes. This study conducts a comparative analysis between two types of LEDs: one with a single quantum well (SQW) composed of AlGaN and another with BAlGaN, containing 1% boron, 22% aluminum, and a 3 nm thickness. These LEDs are designed as AlGaN-based Quantum Well (LED1) and BAlGaN-based Quantum well devices (LED2). Technology Computer-Aided Design (TCAD) Silva… Show more
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