Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Shimizu, Yasuo; Inoue, Koji; Yano, Fumiko; Kudo, S.; Nishida, Akio; Toyama, Takeshi; Nagai, Yasuyoshi

doi:10.7567/jjap.55.026501

Cited by 19 publications

(18 citation statements)

References 30 publications

(43 reference statements)

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“…where N (w) is the doping density at a depth w and A is the diode's area. These widths are consistent with the observation reported in [20] that carbon coimplantation might yield to narrower implant widths. Table 3 reports the wafers and the irradiation steps used in the irradiation campaign.…”

Section: Properties Of Lgad With Different Gain Layer Dopingsupporting

confidence: 93%

“…Wafer These widths are consistent with the observation reported in [20] that carbon coimplantation might yield to narrower implant widths.…”

Section: Properties Of Lgad With Different Gain Layer Dopingsupporting

confidence: 92%

“…It is visible in the plot that Carbon implantation reduces the activated fraction of Gallium, while the Carbon effects on Boron is minimal: V GL is on average 0.3V smaller for B+C LGADs with respect to that of B LGADs. A discussion of the effects of Carbon co-implantation can be found in [20].…”

Section: Properties Of Lgad With Different Gain Layer Dopingmentioning

confidence: 99%

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Radiation resistant LGAD design

Ferrero

Arcidiacono

Barozzi

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

110

109

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In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer.LGADs with a gain layer made of Boron, Boron lowdiffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to φ n ∼ 3 · 10 16 n/cm 2 and to proton fluences up to φ p ∼ 9 · 10 15 p/cm 2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.The LGAD design evolves the standard silicon sensors design by incorporating low, controlled gain [1] in the signal formation mechanism. The overarching idea is to manufacture silicon detectors with signals large enough to assure excellent timing performance while maintaining almost unchanged levels of noise [2].Charge multiplication in silicon sensors happens when the charge carriers (electrons and holes) are in electric fields of the order of E ∼ 300 kV/cm [3]. Under this condition, the electrons (and to less extent the holes) acquire sufficient kinetic energy to generate additional e/h pairs by impact ionization. Field values of ∼300 kV/cm can be obtained by implanting an appropriate acceptor (or donor) charge density ρ A (of the order ρ A ∼

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Section: Properties Of Lgad With Different Gain Layer Dopingsupporting

confidence: 93%

“…Wafer These widths are consistent with the observation reported in [20] that carbon coimplantation might yield to narrower implant widths.…”

Section: Properties Of Lgad With Different Gain Layer Dopingsupporting

confidence: 92%

See 1 more Smart Citation

Radiation resistant LGAD design

Ferrero

Arcidiacono

Barozzi

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

110

109

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“…The CV curves, indicate that Carbon coimplantation reduces the number of active dopants, somewhat more in Gallium than in Boron. These results are qualitatively in agreement with the effect of C co-implantation, of an enhancement of the B (and probably Ga) activation, as observed in [8]. Good uniformity is observed on the various structures tested on wafer prior the final cutting.…”

Section: Defect Engineering the Gain Layer: Production Of Ufsd Sensorsupporting

confidence: 80%

Tracking in 4 dimensions

Cartiglia¹,

Arcidiacono²,

Boscardin³

et al. 2017

Proceedings of the European Physical Society Conference on High Energy Physics — PoS(EPS-HEP2017)

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In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ∼ 10 ps and ∼ 10µm with a 50 µm thick sensor. The first part of this contribution explains the basic concepts of low-gain silicon sensors, while in the following the main results are presented, together with the efforts to make the design radiation resistance.

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“…Within the RD50 Collaboration [12], it has been proposed to replace the Boron of the gain layer with Gallium, as Gallium might have a lower probability to become interstitial than Boron [13,14]. A further proposal has been to add Carbon atoms in the gain layer volume to reduce the disappearance of gain, as Carbon might slow down the acceptor removal mechanism protecting the Boron, or Gallium, dopant [15]. Moreover, the idea that reducing the implant volume could reduce the cross section of gain layer inactivation was proposed.…”

Section: Production Of 50 µM Thick Ufsd At Fbkmentioning

confidence: 99%

First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors

Sola,

Arcidiacono,

Boscardin

et al. 2018

Preprint

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Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 µm thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of φ ∼ 10 15 n eq /cm 2 . In this paper, we present the characterisation, the timing performance, and the results on radiation damage tolerance of this new FBK production.

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Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements

Cited by 19 publications

References 30 publications

Radiation resistant LGAD design

Radiation resistant LGAD design

Tracking in 4 dimensions

First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors

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