2021
DOI: 10.1007/s12633-021-01121-4
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Impact of Channel Doping Concentration on the Performance Characteristics and the Reliability of Ultra-Thin Double Gate DG-FinFET Compared with Nano-Single Gate FD-SOI-MOSFET by Using TCAD-Silvaco Tool

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Cited by 9 publications
(3 citation statements)
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“…Most disruptions to TSVs' electrical signals are caused by noise coupling between TSVs conveying the signals. The use of guard rings around the TSVs and in the TSVs themselves has been shown to reduce noise coupling by a small amount, according to a few studies [7]- [9]. Although the guard ring construction is rather excellent, more structure is needed to enhance noise coupling.…”
Section: Introductionmentioning
confidence: 99%
“…Most disruptions to TSVs' electrical signals are caused by noise coupling between TSVs conveying the signals. The use of guard rings around the TSVs and in the TSVs themselves has been shown to reduce noise coupling by a small amount, according to a few studies [7]- [9]. Although the guard ring construction is rather excellent, more structure is needed to enhance noise coupling.…”
Section: Introductionmentioning
confidence: 99%
“…Ganesh et al [3] has reported an asymmetric triple surrounding gate MOSFET and its subthreshold analytical model for improved analog applications. Bourhala et al [25] has investigated the impact of channel doping on the performance characteristics of a FINFET. Rewari et al [24] has reported the use of HfO 2 in a junctionless nanowire to improve its analog performance.…”
Section: Introductionmentioning
confidence: 99%
“…The three most crucial metrics to look for if you want a dependable cache memory are read and write static noise margin, as well as hold static noise margin. The static power consumption of an SRAM cell is calculated by adding all transistor leakage currents in the cell [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%