Impact of doping level on the metal assisted chemical etching of p-type silicon

Backes, Andreas; Schmid, U.

doi:10.1016/j.snb.2013.11.009

Cited by 19 publications

(13 citation statements)

References 17 publications

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“…[12][13][14] Several prior studies focused on the morphological control of nanoporous Si and Si nanowires through varying the process parameters, such as the oxidant type, etchant concentration, reaction time, processing temperature and type of Si. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] The theory of hole injection during etching is perhaps the most widely accepted mechanism for MacEtch. 4,[34][35][36][37][38] Many observations can be qualitatively explained by the holes' injection from noble metal particles as the catalyst into the Si substrate and the subsequent diffusion of holes within the Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

Jiang

et al. 2016

Nanoscale

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The etching anisotropy induced by the morphology and rotation of silver particles controls the morphology of silicon nanoporous structures, through various underlying complex etching mechanisms. The level of etching anisotropy can be modulated by controlling the morphology of the silver catalyst to obtain silicon nanoporous structures with straight pores, cone-shaped pores and pyramid-shaped pores. In addition, the structures with helical pores are obtained by taking advantage of the special anisotropic etching, which is induced by the rotation and revolution of silver particles during the etching process. An investigation of the etching anisotropy during metal assisted chemical etching will promote a deep understanding of the chemical etching mechanism of silicon, and provide a feasible approach to fabricate Si nanoporous structures with special morphologies.

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Section: Introductionmentioning

confidence: 99%

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

Jiang

et al. 2016

Nanoscale

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“…To test the versatility of the fabrication process, we produce various patterns of arrays, including circles, ribbons, triangles, and squares. The final geometry of the Si arrays depends on processing parameters, including the thickness/shape of metal, the concentration of etchant, and the orientation/doping density of the substrate 2,5,21,26,34 . In this work, we used a 10 nm-thick patterned Au layer as a catalyst.…”

Section: Resultsmentioning

confidence: 99%

Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching

Yang

Magginetti

Jeon

et al. 2020

Sci Rep

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Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiOx shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiOx shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (≈ 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (≈ 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+ 0.5 V), which is restored to the level of planar Si control (− 0.5 V) after removing SiOx in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiOx shell can be beneficial for various sensor architectures.

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“…Among existing solid substrates, silicon nanostructures (SiNSs) and metal-SiNSs composites are recognized as some of the potential and robust SERS-active substrates because of their admirable properties such as spatial selectivity during physical and chemical treatments, sustainable chemical tunability, surface roughness, earth-abundancy, and compatibility of today’s state-of-the-art technologies and are highly appreciated by the SERS community. , Moreover, these qualities offer the distribution of high-density plasmonic hot-spots across all the spatial planes (i.e., band edges and band gaps), which facilitate the better probability of trap target analytes in the hot-spot regions. − Therefore, chemically processed silicon-based NSs show well adaptability in SERS molecular sensing. In the extended view, a comprehensive short review by Wang et al reported extensively on silicon-based SERS substrates for effective SERS sensing .…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanostructures for Molecular Sensing: A Review

Vendamani

Rao

Pathak

2022

ACS Appl. Nano Mater.

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This review presents a comprehensive synopsis of the recent developments and achievements in the research of nanosensors composed of plasmonic nanoparticles (NPs) and silicon nanostructures (NSs) for effective trace-level molecular detection. This review focuses intensively on the methodologies for the preparation and enforcement of a variety of SiNSs including (a) metal nanoparticles decorated silicon nanowires (NWs), (b) metal nanodendrites (NDs) on Si substrate, (c) plasmonic NPs decorated nanocrystalline porous silicon (pSi), and (d) silicon composed hybrid nanostructures with favorable parameters of importance in sensing. Furthermore, their potency in wide molecular sensing applications, especially chemical, biological, and explosive molecules based on surface enhanced Raman scattering (SERS) phenomenon is discussed in detail. Various demonstrations and categorizations are provided on the topic of Si-based NSs for a clear understanding to diverse readers. A roadmap is also provided at the end for achieving superior sensing materials or devices in the future.

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Impact of doping level on the metal assisted chemical etching of p-type silicon

Cited by 19 publications

References 17 publications

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

Etching anisotropy mechanisms lead to morphology-controlled silicon nanoporous structures by metal assisted chemical etching

Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching

Silicon Nanostructures for Molecular Sensing: A Review

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