Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

PECVD-AlOx/SiNx Passivation Stacks on Silicon: Effective Charge Dynamics and Interface Defect State Spectroscopy

“…In addition, the negatively charged tetrahedral AlO 4 which is dominant near the SiO x /AlO x interface [4] is very likely to be responsible for fixed negative charges. Recent experimental works have demonstrated that charging of traps near the SiO x /AlO x -interface plays an important role in the formation of the negative charge [11][12][13][14]. Capping the passivating AlO x with SiN x offers several advantages in comparison to uncapped AlO x -single layers for Si solar cell processing [1], such as better chemical and thermal stability [22] as well as enhanced internal reflectivity when applied on the rear side of solar cells [15,16].…”