2020
DOI: 10.52549/ijeei.v8i2.2041
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Impact of Electron Radiation Dose to the Performance of Half-Wave Rectifier and Converter Circuits with Silicon Carbide Schottky Diode

Abstract: Half-wave rectifier; buck; and boost converter with electron-irradiated, highvoltage silicon carbide Schottky power diodes from CREE, Inc., performance was studied and presented in this paper subjected to electron radiation. The diodes were irradiated by high-energy (3 MeV) electrons with doses ranging from 1 to 5 MGy. The performance of the circuits in term of the output voltage were measured before and after the diodes being irradiated. It was observed, at 4 MGy, the half-wave rectifier output voltage degrad… Show more

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