Impact of F species on plasma charge damage in a RF asher

A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology

“…At low percentiles, the distribution slope is almost independent of AR, and failure times are reduced in accordance with Eqs. (2)- (6). Moreover, there is no indication in the experimental data of the presence of an early failure distribution arising from a defective subpopulation, as required for our proposed model.…”

“…These figures indicate that the antenna dependence m follows the power-law relationship, consistent with Eq. (6). For high-k/metal-gate transistors with an EOT of 2.0 nm, Fig.…”

“…The PBTI (or NBTI) lifetime is affected by the variation in DN ov (or DN it ) from Eqs. (4)- (6). By assuming a nominally identical AR and EOT, and with the further assumption of a normal distribution of DN ov (l, r), a corresponding distribution of threshold voltage shift will be generated during PBTI stressing.…”

“…PID is well known to degrade both gate dielectric and metal-oxide-semiconductor field-effect transistors (MOSFETs) reliability [2]. The silicon wafer manufacturing employs many plasma-processing steps, including gate electrode etching [3], high density plasma chemical vapor deposition (HDP-CVD) [4], metal interconnect etching [5], and photoresist ashing [6]. During plasma processing, charges (i.e., ions or electrons) accumulated from a large interconnect area cause a local imbalance in the surface potential across the gate dielectric, and cause current to flow through the gate electrode.…”

A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2and SF6/O2

“…However, the optical emission intensity of atomic fluorine was measured to observe the common element between the SF 6 and NF 3 processes. The emission peaks of atomic fluorine at 658.6 nm and 703.7 nm were used [18][19][20] and the sum of them referred to the optical emission intensities of atomic fluorine (I(F)) in this experiment.…”