2001
DOI: 10.1063/1.1390503
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Impact of gas heating in inductively coupled plasmas

Abstract: Recently it has been recognized that the neutral gas in inductively coupled plasma reactors heats up significantly during processing. The resulting gas density variations across the reactor affect reaction rates, radical densities, plasma characteristics, and uniformity within the reactor. A self-consistent model that couples the plasma generation and transport to the gas flow and heating has been developed and used to study CF 4 discharges. A Langmuir probe has been used to measure radial profiles of electron… Show more

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Cited by 53 publications
(32 citation statements)
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“…In particular, gas temperature, the basic thermodynamic state parameter, decides the neutral gas density with state equation and helps us understand the power consumption. 20,21 Gas temperature is always estimated using radiative transitions of diatomic molecules, such as N 2 , C 2 , OH, CO, whose rotational temperature was considered to be equal to gas translational temperature. [22][23][24][25][26] It is worthwhile to note that the ratio of vibrational temperature to rotational temperature can suggest nonequilibrium level of microplasma.…”
mentioning
confidence: 99%
“…In particular, gas temperature, the basic thermodynamic state parameter, decides the neutral gas density with state equation and helps us understand the power consumption. 20,21 Gas temperature is always estimated using radiative transitions of diatomic molecules, such as N 2 , C 2 , OH, CO, whose rotational temperature was considered to be equal to gas translational temperature. [22][23][24][25][26] It is worthwhile to note that the ratio of vibrational temperature to rotational temperature can suggest nonequilibrium level of microplasma.…”
mentioning
confidence: 99%
“…Though this work is limited to only dc discharges; similar conclusions are expected for rf, inductive, and microwave reactors. Indeed, both experimental diagnostics and modeling , of gas and substrate heating in inductive and electron cyclotron resonance plasmas used in semiconductor processing have been reported. All of this suggests that a deliberate cooling of the substrate needs to be introduced if room temperature or low-temperature growth is desired for a given set of conditions, including a reasonable power.…”
mentioning
confidence: 99%
“…26 In our previous work 19 n n was obtained using an approximate gas heating rate assumed based on publications on neutral heating in inductively coupled plasmas. [27][28][29] In this work, the neutral density n n is determined based on the ideal gas law for neutrals ͑P n = n n k B T trans ͒, with T trans obtained based on the neutral gas temperature determined from OES ͑Sec. II B͒ and P n measured experimentally using a fast response pressure gauge.…”
Section: Evaluation Of Electron Temperature Using Millimeter Wave Intmentioning
confidence: 99%