Impact of gate coupling and misalignment on performance of double-gate organic thin film transistors

Abstract

This paper proposes a numerical simulation of the dual-gate organic thin film transistors (DG-OTFTs). It is revealed that electrically separable double-gate architecture is able to dynamically control the threshold voltage by the coupling of the top/bottom gates. We also observe that the device characteristics are sensitive to the misalignment and the moving direction between top/bottom gates. A significant change to the driving ability and threshold voltage is found while misalignment exists. As the misalignment is larger, the driving-current reduces and threshold voltage increases quickly. Also the degradation is severe while the mismatch is moved to drain and relaxed with large channel length.

Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors

“…2a ). These reductions are consistent with the observations made in Si-MOSFETs 24 and double gate OTFTs 25 with mismatched gate and source electrodes. Device III is suited best for quantitative comparison to the reference device II , since it possesses a comparable channel length L and also a gate-source overlap exceeding 1 μm.…”

Study on the contact resistance of various metals (Au, Ti, and Sb) on Bi–Te and Sb–Te thermoelectric films

“…In the TLM structure, the electrodes are spaced systematically at various distances (20,25,30,35,40,45,50, and 55 µm) on the Bi 2 Te 3 or Sb 2 Te 3 thermoelectric thin film (1.4 mm × 110 µm), as depicted in Fig. 1.…”

Enhanced Functionality of Dual-Gate Organic Transistors Based on Semiconducting/Insulating Polyblend-Induced Asymmetric Charge Modulation Layers

“…Polymer ALs are prepared from spin-coating, dip-casting, drop-casting, and inkjet printing methods. , In recent years, significant progress has been made toward reaching high-performance polymeric semiconductor-based OTFTs using SG configuration, and the observed mobility is comparable or even better than that of π-conjugated small-molecule and amorphous silicon TFTs. , However, the top insulator material should be deposited upon the underlying polymeric semiconductor film to realize polymeric DG-OTFTs and is an arduous task because of damage problems. Nevertheless, polymeric DG-OTFTs with a common feature of a shift of the transfer curve with applied second gate bias is also observed. − ,, Moreover, the on/off current ratio, ss steepness, and charge mobility could be increased in these polymeric-based DG-OTFTs. Additionally, the gate dielectrics on top of the polymeric AL also serve as a passivation layer as the DG structure is adopted, and the atmospheric instability features of polymeric OTFTs are cut off.…”

“…Nevertheless, polymeric DG-OTFTs with a common feature of a shift of the transfer curve with applied second gate bias is also observed. [13][14][15][16][17][18][19]26,27 Moreover, the on/off current ratio, ss steepness, and charge mobility could be increased in these polymeric-based DG-OTFTs. Additionally, the gate dielectrics on top of the polymeric AL also serve as a passivation layer as the DG structure is adopted, and the atmospheric instability features of polymeric OTFTs are cut off.…”

“…OTFTs with dual-gate configuration, called DG-OTFTs, contain a second gate dielectric with a second gate positioned opposite to the first gate and allow us to adjust charge accumulation and distribution within the channel by applying the second gate bias. Normally, the V th shifts depend on the ratio of the capacitance of the two gate dielectrics. ,− DG-OTFTs also have several good functionalities, such as increased on/off ratio, improved mobility, steep subthreshold slope, and enhanced charge modulation in the channel. ,− Moreover, TFTs with a DG configuration can produce special electrical behaviors or optimize performance for electronic applications, such as simplify circuit design, static random access memory, cell sensing, pressure sensing, UV detection, and so on. − …”