Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects

Plasma etching steps are critical for MOS channel High Electron Mobility Transistors (MOSc-HEMT) gate fabrication as they can deteriorate electrical performances due to gallium nitride degradation. Adding SiCl4 to a low bias Cl2 plasma in presence of a SiN hard mask environment forms a silicon-based passivation layer that protects GaN from nitrogen depletion (N/Ga = 1) as extracted from X-ray Photoelecron Spectroscopy (XPS) measurements. The deposited layer is not removed by subsequent surface treatments that precede the gate dielectric deposition such as O2 plasma and HCl. This nitrogen preservation as well as the passivation’s presence result in a higher flat band voltage (VFB) due to less positive charge generation at the GaN/dielectric interface. This SiCl4-based etching process could then be used as a 20 nm plasma etching finishing step in order to recover GaN surface after a fast and damaging trench formation process.

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Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects

Cited by 2 publications

References 21 publications

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Passivating and low damaging plasma etching of GaN using Cl₂ and SiCl₄ for recessed gate MOSc-HEMT devices

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Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects

Cited by 2 publications

References 21 publications

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Passivating and low damaging plasma etching of GaN using Cl2 and SiCl4 for recessed gate MOSc-HEMT devices

Contact Info

Product

Resources

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Passivating and low damaging plasma etching of GaN using Cl₂ and SiCl₄ for recessed gate MOSc-HEMT devices