Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Matsukawa, Takashi; Fukuda, Koichi; Liu, Yongxun; Tsukada, Junichi; Yamauchi, H.; Endo, Kazuhiko; Ishikawa, Yoshihiro; O’uchi, S.; Migita, Shinji; Morita, Yukinori; Mizubayashi, Wataru; Ota, Hiroyuki; Masahara, Meishoku

doi:10.7567/apex.8.044201

Cited by 8 publications

(6 citation statements)

References 28 publications

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“…). These lateral variations of the EWF will directly be reflected in lateral variations of V bi , leading to variability of threshold voltages and degrading the sub‐threshold slope of transistor transfer characteristics . Again, the question arises concerning the applicability of the vacuum WF variability values, known from surface microscopy studies, to the electrostatics of the interfaces.…”

Section: Introductionmentioning

confidence: 99%

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

Afanas’ev

Kolomiiets

Houssa

et al. 2017

Physica Status Solidi (a)

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Interfaces of heterogeneous solids, ranging from polycrystalline materials to composites, are frequently encountered in nanotechnology. Electron transport in these materials and across their interfaces critically depends on the energy barriers electrons encounter on their way. Because of electrode structural heterogeneity, the barriers may exhibit significant spatial variations resulting in a broad distribution of barrier heights and built-in potentials. Quantification of the distributed interface barriers represents a formidable experimental challenge since direct association of interface properties with those of an outer free surface is generally inaccurate. Here we present a methodology enabling quantification of electron barriers at interfaces of semiconductors and metals with insulators using the electric field-dependent internal photoemission (IPE) of electrons. It is shown that practically relevant interfaces may contain "patches" with differences in barrier height (or the effective work function) of up to 1 eV, which makes the electrode heterogeneity a crucial factor in designing electron devices suitable for low-voltage operation.

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Section: Introductionmentioning

confidence: 99%

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

Afanas’ev

Kolomiiets

Houssa

et al. 2017

Physica Status Solidi (a)

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“…The development of FinFET has also benefited from amorphous metal thin films (22,23). By using TaSiN amorphous metal gates work function variation was suppressed when compared to a polycrystalline TiN gate.…”

Section: Resultsmentioning

confidence: 99%

P‐196: Late‐News‐Poster: Low‐Temperature All Sputter IGZO‐TFT Fabricated with Amorphous Metal Thin‐Films

Kearney¹,

Mendez²,

Self³

et al. 2020

Symp Digest of Tech Papers

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The flexibility, strength, and smoothness of amorphous metal thin-films have enabled the development of a new generation of high-performance diode and transistor devices for flat panel and thin-film electronic applications. This work reports on recent progress toward the development of amorphous metal thin-film transistors. The etch stop layer type transistors reported in this work demonstrate field effect mobilities as high as 20 cm 2 /V s, depending on the processing conditions. All thin-film layers for these amorphous metal thin-film transistors were deposited using sputter physical vapor deposition techniques at room temperature. The low temperature processing, as well as the strong and flexible nature of amorphous metals, makes amorphous metal thin-film transistor technology potentially useful for robust high-speed highly flexible electronics.

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“…This non-uniformity may be caused by non-uniformity of the 2D film itself, e.g., co-presence of regions with different thicknesses (different number of MLs), defects (pores, transfer-induced cracks), patches of contaminants [24], nonuniformity of the underlying substrate, etc. Evaluation of this non-uniformity becomes important when considering the corresponding variability of the built-in potential which induces an irregular electric field directly affecting the electron transport in the vicinity of the interface [89,90]. A the traditional way to estimate these non-uniformities is based on measurements of the capacitance of the semiconductor deplection layer [91,92].…”

Section: Lateral Non-uniformity Of Interface Barriermentioning

confidence: 99%

Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

Afanas’ev

Delie

Houssa

et al. 2020

J. Phys.: Condens. Matter

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The article overviews experimental results obtained by applying Internal PhotoEmission (IPE) spectroscopy methods to characterize electron states in single-or few-monolayer twodimensional (2D) materals and at their interfaces. Several conducting (graphene) and semiconducting (transitional metal dichalcogenides MoS2, WS2, MoSe2, and WSe2) films have been analyzed by IPE, which reveals significant sensitivity of interface band offsets and barriers to the details of the material and interface fabrication indicating violation of the Schottky-Mott rule. This variability is associated with charges and dipoles formed at the interfaces with van der Waals bonding as opposed to the chemically bonded interfaces of three-dimensional semiconductors and metals. Chemical modification of the underlying SiO2 surface is shown to be a significant factor, affecting interface barriers due to violation of the interface electroneutrality.

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Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Cited by 8 publications

References 28 publications

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

Internal Photoemission Metrology of Inhomogeneous Interface Barriers

P‐196: Late‐News‐Poster: Low‐Temperature All Sputter IGZO‐TFT Fabricated with Amorphous Metal Thin‐Films

Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

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