Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

Yurasov, D. V.; Bobrov, A. I.; Danil’tsev, V. M.; Новиков, А. В.; Павлов, Д. А.; Скороходов, Е. В.; Shaleev, M. V.; Yunin, P. A.

doi:10.1134/s1063782615110263

Cited by 24 publications

(24 citation statements)

References 27 publications

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“…It can be seen from the table that decrease of the Ge buffer thickness from 1 to 0.3 µm increases the density of threading dislocations by almost an order of magnitude according to the defect etching measurements. The latter agrees well with the results, obtained in [11] for similar annealing parameters. At the same time, the root-mean-square (RMS) roughness of the Ge buffer increased very slightly (from 1 to 1.3 nm), which may be caused by the smaller total aging time at elevated temperatures during cyclic annealing.…”

Section: Growth Of Ge Buffer Layer On Si Substratessupporting

confidence: 93%

“…The exact (miscut from (001) is less than 0.5 • ) and 4 • offcut to [011] axis Ge/Si(001) virtual substrates were grown by solid source molecular beam epitaxy (MBE) using the Riber SIVA-21 machine using the so-called "two-step" growth strategy [9][10][11]. The growth temperature was controlled with a calibrated thermocouple [12] and a specialized infrared pyrometer IMPAC IS 12.…”

Section: Growth Of Ge Buffer Layer On Si Substratesmentioning

confidence: 99%

“…As the prerequisites for this one can consider the differences in surface morphologies of the samples grown on GaAs and Ge/Si substrates. First, the virtual Ge/Si substrates were initially significantly more defective (threading dislocation densities of 10 7 ÷ 10 8 cm −2 [11]) in comparison with GaAs substrates. Secondly, APBs appear during growth on Ge/Si substrates which lead to the formation of a developed surface with a roughness of at least several nanometers [20].…”

Section: The Growth Of Laser Heterostructures With Ingaas Quantum Welmentioning

confidence: 99%

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MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

et al. 2018

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The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were 5.5 kA/cm2 and 20 kA/cm2 for lasers operating at 0.99 μm and 1.11 μm respectively. In order to obtain the stimulated emission at wavelengths longer than 1.1 μm, the InGaAs quantum well laser structures with high In content and GaAsP strain-compensating layers were grown both on Ge/Si and GaAs substrates. Structures grown on GaAs exhibited stimulated emission under optical pumping at the wavelengths of up to 1.24 μm at 300 K while those grown on Ge/Si substrates emitted at shorter wavelengths of up to 1.1 μm and only at 77 K. The main reasons for such performance worsening and also some approaches to overcome them are discussed. The obtained results have shown that monolithic integration of direct-gap A3B5 compounds on Si using MOCVD technology is rather promising approach for obtaining the Si-compatible on-chip effective light source.

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Section: Growth Of Ge Buffer Layer On Si Substratessupporting

confidence: 93%

Section: Growth Of Ge Buffer Layer On Si Substratesmentioning

confidence: 99%

Section: The Growth Of Laser Heterostructures With Ingaas Quantum Welmentioning

confidence: 99%

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MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

et al. 2018

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“…Using modified growth techniques, e.g. two-step growth (Colace et al, 1998;Halbwax et al, 2005;Yurasov et al, 2015), graded buffering (Fitzgerald et al, 1988) or surfactant-mediated epitaxy (SME) (Copel et al, 1989;Wietler et al, 2006), islanding can be overcome and plastic relaxation is enforced.…”

Section: Epitaxial Growth Of Ge/si(001)mentioning

confidence: 99%

Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system

2020

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The Ge/Si(001) system has been analysed by grazing-incidence X-ray diffraction on a standard laboratory X-ray diffraction tool. A periodic array of interfacial edge dislocations forms a coincidence site lattice (CSL) which yields equidistantly spaced satellite peaks close to Bragg peaks of the Ge layer and Si substrate. The diffraction behaviour of the CSL was analysed using 2θ/φ scans along [100], [110] and [310] directions as well as azimuthal φ scans which revealed a 90° angular symmetry of the CSL. Additionally, different layer thicknesses, from 10 to 580 nm, were analysed, focusing on the dependence of layer thickness on the glancing angles of the satellite peaks. This method provides the ability to analyse whether or not epitaxially grown layers exhibit a periodic array of dislocations, and gain information about the orientation of the interfacial edge dislocations.

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“…Росту соединений А III В V на SOI препятствуют такие же фундаментальные проблемы, какие встречаются при формировании А III В V на подложке Si и подробно описаны в обзорных публикациях [3,4]. Для решения фундаментальных проблем при эпитаксии материалов А III В V на Si применяется комплекс различных методов, которые представлены в работах [3][4][5][6][7], в том числе формирование буферных слоев Ge/Si между А III В V и Si [8,9]. Однако температурные режимы эпитаксии слоев Ge/Si на SOI и Si различаются из-за наличия скрытого слоя SiO 2 в SOI.…”

Section: Introductionunclassified

Сравнение гетероструктур А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=-, выращенных на платформах Ge/Si, Ge/SOI и GaAs

Сушков¹,

Павлов²,

Андрианов³

et al. 2021

Физика И Техника Полупроводников

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AIIIBV/Ge/Si (001), AIIIBV/Ge/SOI (001), and AIIIBV/GaAs (001) heterostructures were formed and investigated. The Ge buffer layer was produced by the "hot wire" technique on a Si substrate (001) for the AIIIBV/Ge/Si structure. In the case of the AIIIBV/Ge/SOI, the Ge buffer layer was grown on the SOI (001) substrate by molecular beam epitaxy via two-stage growth. The growth of AIIIBV layers were performed by metalorganic chemical vapor deposition. It is shown that the Ge/SOI formed via two-stage growth allows the growth of AIIIBV layers that are not inferior in structural and optical quality to those formed on the Ge/Si.

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Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

Cited by 24 publications

References 27 publications

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

Grazing-incidence X-ray diffraction investigation of the coincidence site lattice of the Ge/Si(001) system

Сравнение гетероструктур А-=SUP=-III-=/SUP=-В-=SUP=-V-=/SUP=-, выращенных на платформах Ge/Si, Ge/SOI и GaAs

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