Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence

Khan, Ruby; Arora, Aman; Yadav, B. S.; Lohani, Jaya; Goyal, Anshu; Narang, Kanika; Upadhyaya, Garima; Singh, Vikash Kumar; Saini, Sachin K.; Raman, R.; Padmavati, M. V. G.; Tyagi, Renu; Bag, Rajesh K.; Riaz, Ufana

doi:10.1007/s10854-020-03993-5

Cited by 7 publications

(5 citation statements)

References 35 publications

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“…At lower growth temperature (i.e., at a higher Ga supersaturation), the reduced intensity of YL is probably due to the lower concentration of V Ga –O N . An opposite trend has been observed in heteroepitaxial GaN on SiC, where the YL intensity increases at reduced growth temperatures, but in this case, the reason was the much larger C incorporation . The observed blueshift of the YL with increasing growth temperature (Figure ) also indicates that different deep point defects are involved in the YL from the homoepitaxial layers grown at different temperatures.…”

Section: Resultsmentioning

confidence: 78%

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Carrascon

Richter

Nawaz

et al. 2022

Crystal Growth & Design

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Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for the development of GaN homoepitaxy. We propose a new approach to grow high-quality homoepitaxial GaN in N2-rich carrier gas and at a higher supersaturation as compared to heteroepitaxy. We develop a low-temperature GaN as an optimum nucleation scheme based on the evolution and thermal stability of the GaN surface under different gas compositions and temperatures. Analysis in the framework of nucleation theory of homoepitaxial layers simultaneously grown on GaN templates on SiC and on hydride vapor phase epitaxy GaN substrates is presented. We show that residual strain and screw dislocation densities affect GaN nucleation and subsequent growth leading to distinctively different morphologies of GaN homoepitaxial layers grown on GaN templates and native substrates, respectively. The established comprehensive picture provides a guidance for designing strategies for growth conditions optimization in GaN homoepitaxy. GaN with atomically flat and smooth epilayer surfaces with a root-mean-square roughness value as low as 0.049 nm and low background carbon concentration of 5.3 × 1015 cm–3 has been achieved. It is also shown that there is no generation of additional dislocations during homoepitaxial growth. Thus, our results demonstrate the potential of the hot-wall MOCVD technique to deliver high-quality GaN material for vertical power devices.

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Section: Resultsmentioning

confidence: 78%

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Carrascon

Richter

Nawaz

et al. 2022

Crystal Growth & Design

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“…If it is required to grow caps with varying thicknesses one would probably have to resort to verifying the cap thickness by TEM and adjust the recipes accordingly. Secondly, another potential issue might be the high carbon doping levels one would expect to build up in the GaN cap at lower growth temperatures [35,36].…”

Section: Resultsmentioning

confidence: 99%

Strategy for Reliable Growth of Thin Gan Caps on Algan Hemt Structures

Hinz

Ghosh

Fairclough

et al. 2023

Preprint

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“…Penetration depth of electron beam in the samples was estimated using Monte Carlo simulations CASINO software (Khan et al, 2020). CASINO software simulation results are show in Figure 9.…”

Section: Results and Analysismentioning

confidence: 99%

Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

et al. 2021

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Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence

Cited by 7 publications

References 35 publications

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Strategy for Reliable Growth of Thin Gan Caps on Algan Hemt Structures

Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

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