2024
DOI: 10.1021/acsaelm.4c01025
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Impact of Hafnium Doping on Phase Transition, Interface, and Reliability Properties of ZrxHf1–xO2-Based Capacitors

Pramoda Vishnumurthy,
Bohan Xu,
Florian Wunderwald
et al.

Abstract: Zirconium oxide and zirconium-rich Zr x Hf 1−x O 2 thin films have attracted attention owing to their switching stability and significant promise for commercial applications such as high-performance, nonvolatile memory devices, high-density energy storage devices, and supercapacitors. In the path toward commercial applications, understanding the factors influencing the formation of ferroelectric properties in these films is essential. This study explores the impact of hafnium doping on various factors affectin… Show more

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