Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET

Watanabe, T.; Takayanagi, Motowo; Kojima, Kazunobu; Ishimaru, K.; Ishiuchi, H.; Sekine, Katsuyuki; Yamasaki, H.; Eguchi, Kazuhiro

doi:10.1109/iedm.2004.1419202

Cited by 32 publications

(20 citation statements)

References 6 publications

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“…For technology nodes beyond 25 nm, using silicate, oxynitride or aluminate of hafnium and metal gate will be technological feasible. It was found recently that adding Al and N into the oxide could improve the characteristics a lot [150,[201][202][203]. Zhu et al found that with 40% of Al incorporation, the crystallization temperature can be increased up to 1000°C as shown in Fig.…”

Section: Major Problems Fundamental Limitations and Possible Solutionsmentioning

confidence: 93%

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On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

355

184

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Section: Major Problems Fundamental Limitations and Possible Solutionsmentioning

confidence: 93%

“…Addition of nitrogen can also improve some of the dielectric properties [201][202][203]. Lee et al found that the crystallization temperature could be increased up to 800°C [201].…”

Section: Major Problems Fundamental Limitations and Possible Solutionsmentioning

confidence: 96%

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

355

184

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“…In the case of large-area transistors, the noise spectrum will be dominated by 1/f γ (γ ∼1) or flicker noise, which can be employed for an oxide trap characterization when obeying the so-called number fluctuations ( n) model [1]- [4]. Flicker noise analysis of gate oxide traps has also been applied successfully to the case of devices with a high-k (HK) gate-stack, whereby the noise power spectral density (PSD) is quite sensitive to the deposition method [5], the composition of the layer, e.g., the Hf content [6]- [10], the type and thickness of the interfacial layer (IL) [11]- [15] and, finally, replacing a polysilicon [16], [17] by a metal gate [18]- [21]. From the early works, it has generally been concluded that the 1/f noise PSD and the corresponding oxide trap density derived from that is higher in Hf-based HK dielectrics than in SiO 2 or SiON counterparts [5]- [19], while the trap density in the SiO 2 IL was found to be lower [11]- [14].…”

Section: Introductionmentioning

confidence: 99%

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen

Veloso

Higuchi³

et al. 2013

IEEE Trans. Electron Devices

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The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs with an equivalent oxide thickness of the SiO 2 /HfO 2 bilayer in the range ∼1 nm has been investigated. It will be shown that both the average trap density and its profile derived from the frequency exponent γ of the flicker noise spectra are mainly determined by the interfacial layer (IL) oxide processing, with a higher trap density corresponding with a thinner chemical oxide, compared with a ≤1-nm thermal SiO 2 IL. The thickness of the HfO 2 layer and the metal gate fill has only a marginal impact on the noise power spectral density. It will also be shown that for the extraction of the trap density profiles from the 1/f γ noise spectra accurate values for the tunneling effective mass and barrier height are required.Index Terms-Flicker noise, high-k (HK) gate dielectrics, low-frequency (LF) noise, oxide trap density, tunneling.

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“…in [2] can be written using the expression for t f as, [3] Differentiating with respect to E gives [4] Consequently, the energy integral in Eq. [2] can be solved by substituting…”

Section: Low Frequency Noise Model For Mosfetsmentioning

confidence: 99%

(Invited) Degradation in MOSFET Multistack High-k Gate Dielectrics Due to Hot Carrier and Constant Voltage Stress

Çelik‐Butler¹,

Rahman

2010

ECS Trans.

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Hafnium based materials are the leading high dielectric constant (high-k) candidates to replace conventional SiO 2 and SiON as the gate dielectric in complementary metal-oxide-semiconductor (CMOS) devices for sub-45nm technology nodes. To explain the low frequency noise behavior in these gate dielectrics, a new model is required that can take care of various material properties and new structures. In this paper, a new low frequency noise model for high-k gate materials as well as various stress-induced noise degradation are presented. The additional, stress-induced lowfrequency noise was evaluated on nMOSFETs with TiN metal gate and HfSiON gate dielectric. Nitridation of HfSiO was achieved either by high temperature thermal nitridation or by relatively lower temperature plasma nitridation. The difference in stressinduced noise behavior is attributed to the nitrogen profile across the gate dielectric/Si interface and the bulk of the high-k gate oxide caused by different nitridation techniques.

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Impact of Hf concentration on performance and reliability for HfSiON-CMOSFET

Cited by 32 publications

References 6 publications

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

(Invited) Degradation in MOSFET Multistack High-k Gate Dielectrics Due to Hot Carrier and Constant Voltage Stress

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