Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs

Ohyama, H.; Simoen, Eddy; Kuroda, S.; Claeys, Cor; Yamaguchi, Takami; Hakata, T.; Sunaga, H.

doi:10.1109/23.736540

Cited by 22 publications

(4 citation statements)

References 7 publications

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“…[1][2][3][4][5][6][7][8] Despite the fact that different HEMTs exhibit different responses to radiation damage, several general trends occur. To survive in the radiation environment of earth's geomagnetic fields, however, devices must tolerate induced disorder without significant decrease in performance.…”

mentioning

confidence: 99%

Universal behavior in irradiated high-electron-mobility transistors

Weaver

Jackson

2002

Applied Physics Letters

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Radiation-induced decreases in the drain current I d in a wide range of GaAs/AlGaAs high-electron-mobility transistors ͑HEMTs͒ are shown to be directly proportional to the induced defect concentration. The constant of proportionality depends only weakly on gate length, doping profile and concentration, layer thickness, device geometry, and operating voltages, and is hence nearly device independent. The same proportionality holds when the channel layer material is changed from GaAs to InGaAs. However, when the donor layer material is switched to InGaP ͑in InGaAs/InGaP HEMTs͒, the constant of proportionality changes, and the drain current becomes 16 -17 times more radiation tolerant. The drain current in InGaAs/InAlAs HEMTs is about 30 times more radiation tolerant than in InGaAs/AlGaAs. We propose that the linear dependence of I d on defect concentration arises from high-efficiency scattering of carriers out of the two-dimensional electron gas in the channel layer, and that the slope of the linear relationship is determined by the efficiency with which the donor layer reinjects scattered carriers.

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confidence: 99%

Universal behavior in irradiated high-electron-mobility transistors

Weaver

Jackson

2002

Applied Physics Letters

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“…The decrease of optical power is related to the induced lattice defects in the In 0.76 Ga 0.24 As 0.55 P 0.45 multi-quantum well active region, causing a reduction of the non-radiative recombination lifetime and of the mobility due to carrier scattering [2]. One can calculate the damage coefficient of P L at I F = 20 mA for different radiation sources at room temperature irradiation, defined by the following equation [3].…”

Section: Resultsmentioning

confidence: 99%

“…The radiation source dependence of the performance degradation is attributed to the difference of mass of the incident particle and the possibility of nuclear collision for the formation of lattice defects. 3.…”

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confidence: 95%

Radiation damage of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation

Ohyama

Hirao²,

Simoen³

et al. 2001

31st European Solid-State Device Research Conference

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Results are presented of a study on the degradation of InGaAsP laser diodes by hightemperature γ-ray and electron irradiation. It is shown that the optical power decreases after irradiation. One hole trap is observed in the In 0.76 Ga 0.24 As 0.55 P 0.45 multi-quantum well active region after room-temperature γ-or e --irradiation. The deep levels are thought to be associated with the Ga-vacancy. The decrease of the optical power is ascribed to the carrier removal and to the mobility reduction by carrier scattering, through the induced lattice defects. The change of device performance and the introduction rate of lattice defects decrease with increasing irradiation temperature. The optical power after a 200 o C irradiation is nearly identical as before, for the fluence range studied.

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“…14 For example, the collector current in minority carrier HBTs is about ten times more sensitive to radiation-induced displacements than is the drain current in majority carrier HEMTs. [4][5][6][7] In a conventional electronic device, carrier transport occurs by the diffusion of thermally-equilibrated carriers from source to drain. However, when device size falls below the carrier mean free path, or when dimensionality is constrained or quantum mechanical transport mechanisms are employed, the physics of device operation is altered.…”

Section: Iii-v Materials and Devicesmentioning

confidence: 99%

Radiation Effects in Iii-v Semiconductor Electronics

Weaver

McMorrow

Cohn³

2003

Int. J. Hi. Spe. Ele. Syst.

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Particle irradiation effects in III-V semiconductor devices and selected circuits are reviewed. Radiation effects concerns in III-V devices are associated primarily with displacement damage and single-event upset. In conventional transistors, displacement damage decreases the gain, increases leakage and shifts the collector-emitter offset voltage. In reduced dimensional devices. such as high electron mobility transistors and resonant tunneling diodes, the main displacement damage effect is to reduce current by increasing scattering out of the two-dimensional transport state. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are also discussed here. Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles; this sensitivity becomes more significant as clock rates and operating speeds increase.

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Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs

Cited by 22 publications

References 7 publications

Universal behavior in irradiated high-electron-mobility transistors

Universal behavior in irradiated high-electron-mobility transistors

Radiation damage of InGaAsP laser diodes by high-temperature gamma-ray and electron irradiation

Radiation Effects in Iii-v Semiconductor Electronics

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