Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

“…The peaks at 98, 190 and 222 cm −1 correspond to the A g modes, while the 160 cm −1 peak is associated with the B 3g mode. 49,50,51,52 Compared with Ref. 51 the peaks are nearly identical in shape, although all shifted by a few wavenumbers.…”

Defect-Induced Gas-Sensing Properties of a Flexible SnS Sensor under UV Illumination at Room Temperature

“…There were no new phases formed in all of the SnS-80 thin films annealed below 300 °C, as confirmed by XRD and Raman spectra ( Figure 4 d,e). The intensities of the Raman peaks of SnS (98 and 229 cm −1 ) were weak, while other strong peaks at approximately 161 and 192 cm −1 were not observed [ 26 ]. The results indicate the low crystallinity of the SnS thin films, although these thin films were annealed at high temperatures.…”

Fundamental Aspects and Comprehensive Review on Physical Properties of Chemically Grown Tin-Based Binary Sulfides

“…Sn 2 S 3 has a band width that is significantly greater than that of SnS 2 ( Figure 3 b). From the experimental Raman spectra ( Figure 3 c), o-SnS, c-SnS, SnS 2, and Sn 2 S 3 films showed Raman active modes at 93 cm −1 , 161 cm −1 , 192 cm −1 , and 218 cm −1 [ 110 ]; 59 cm −1 , 71 cm −1 , 90 cm −1 , 112 cm −1 , 123 cm −1 , 176 cm −1 , 192 cm −1 , 202 cm −1 , and 202 cm −1 [ 111 ]; 224 cm −1 and 310 cm −1 [ 112 ]; and 61 cm −1 , 91 cm −1 , 179 cm −1 , 220 cm −1 , and 307 cm −1 [ 113 ], respectively, which matched well with theoretically calculated data. The Raman results suggested that o-SnS, c-SnS, SnS 2 , and Sn 2 S 3 phases have distinct modes.…”