Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Zhang, Jian; Sokolovskij, Robert; Chen, Ganhui; Zhu, Yumeng; Qi, Yongle; Lin, Xuhui; Li, Wenmao; Zhang, Guo Qi; Jiang, Yu-Long; Yu, Hongyu

doi:10.1016/j.snb.2018.10.052

Cited by 27 publications

(11 citation statements)

References 22 publications

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“…13,81 Similar to Si-based metal oxide semiconductor field effect transistors (MOSFETs), the GaN HEMT sensor serves as a threeterminal device. The drain current (I DS ) of an AlGaN/GaN-based HEMT can be expressed as: 82,83…”

Section: Hemt Structure Sensorsmentioning

confidence: 99%

“…Similar to Si-based metal oxide semiconductor field effect transistors (MOSFETs), the GaN HEMT sensor serves as a three-terminal device. The drain current ( I DS ) of an AlGaN/GaN-based HEMT can be expressed as: 82,83 where μ is the mobility of 2-DEG, W / L is the gate width/length, and C b is the gate-to-channel capacitance, which is the sum of the contributions of each layer between the gate metal and 2-DEG to capacitance. For AlGaN/AlN/GaN heterostructures, 1/ C b = (1/ C AlGaN + 1/ C AlN + 1/ C 2-DEG ).…”

Section: Types Of Gan-based Gas Sensorsmentioning

confidence: 99%

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A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

Yang

et al. 2023

J. Mater. Chem. C

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Section: Hemt Structure Sensorsmentioning

confidence: 99%

Section: Types Of Gan-based Gas Sensorsmentioning

confidence: 99%

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

Yang

et al. 2023

J. Mater. Chem. C

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“…At lower temperatures, rise and fall times have gone higher. Further, Zhang et al [ 159 ] pre-treated the Pt-gated AlGaN/GaN HEMT sensor with H 2 pulses in dry air ambient at 250 °C. This treatment facilitated the enlargement of the H 2 S detection range up to 90 ppm.…”

Section: Recent Advances In H 2 S Gas Detectionmentioning

confidence: 99%

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO2, SO2 and H2S

Khan

Rao

2019

Sensors

282

100

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Toxic gases, such as NOx, SOx, H2S and other S-containing gases, cause numerous harmful effects on human health even at very low gas concentrations. Reliable detection of various gases in low concentration is mandatory in the fields such as industrial plants, environmental monitoring, air quality assurance, automotive technologies and so on. In this paper, the recent advances in electrochemical sensors for toxic gas detections were reviewed and summarized with a focus on NO2, SO2 and H2S gas sensors. The recent progress of the detection of each of these toxic gases was categorized by the highly explored sensing materials over the past few decades. The important sensing performance parameters like sensitivity/response, response and recovery times at certain gas concentration and operating temperature for different sensor materials and structures have been summarized and tabulated to provide a thorough performance comparison. A novel metric, sensitivity per ppm/response time ratio has been calculated for each sensor in order to compare the overall sensing performance on the same reference. It is found that hybrid materials-based sensors exhibit the highest average ratio for NO2 gas sensing, whereas GaN and metal-oxide based sensors possess the highest ratio for SO2 and H2S gas sensing, respectively. Recently, significant research efforts have been made exploring new sensor materials, such as graphene and its derivatives, transition metal dichalcogenides (TMDs), GaN, metal-metal oxide nanostructures, solid electrolytes and organic materials to detect the above-mentioned toxic gases. In addition, the contemporary progress in SO2 gas sensors based on zeolite and paper and H2S gas sensors based on colorimetric and metal-organic framework (MOF) structures have also been reviewed. Finally, this work reviewed the recent first principle studies on the interaction between gas molecules and novel promising materials like arsenene, borophene, blue phosphorene, GeSe monolayer and germanene. The goal is to understand the surface interaction mechanism.

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“…Wide band gap of GaN provides the HEMT based sensors capability to withstand high temperatures and provide stable operations in harsh environments makes them suitable for application in exhaust diagnosis and emission detection in industrial processes [4]. HEMTs are seen to show high sensitivities for detection of various gases and can be integrated with high temperature and high-power electronics on a single chip [5][6][7][8]. The sensors developed till date are not adequate for continuous monitoring systems due to huge response times and lower resolution.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

2021

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Presented through this work is a steady state analytical model of the GaN HEMT based gas detector. GaN with high chemical and thermal stability provides promises for detectors in hazardous environments. However, HEMT sensor resolution must be improved to develop high precision gas sensors for automotive and space applications. The proposed model aids in systematical study of the sensor performance and prediction of sensitivities. The linear relation of threshold voltage shift at thermal equilibrium is used in predicting the sensor response. Numerical model for the reaction rates and the electrical dipole at the adsorption sites at the surface and metal/semiconductor interface have been developed and the sensor performance is analyzed for various gas concentrations. The validation of the model has been achieved through surface and interfacial charge adsorption-based gate electrode work function, Schottky barrier, 2DEG and threshold voltage deduction using MATLAB and SILVACO ATLAS TCAD. Further the applicability of gd (channel conductance) as gas sensing metric is also presented. With high ID and gd percentile sensitivities of 118.5% and 92 % for 10 ppm hydrogen concentration. The sensor shows capability for detection in sub-ppm levels by exhibiting a response of 0.043% for 0.01ppm (10 ppb) hydrogen concentration. The detection limit of the sensor (1% sensitivity) presented here is 169 ppb and the device current increases by 34.2 μA for 1ppb hydrogen concentration.

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Impact of high temperature H2 pre-treatment on Pt-AlGaN/GaN HEMT sensor for H2S detection

Cited by 27 publications

References 22 publications

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO2, SO2 and H2S

Modeling and Simulation of Ultrahigh Sensitive AlGaN/AlN/GaN HEMT-Based Hydrogen Gas Detector With Low Detection Limit

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