Impact of Hole Transport Layers in Inorganic Lead-Free B-γ-CsSnI3 Perovskite Solar Cells: A Numerical Analysis

Abstract

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).

Improving the Performance of Lead‐Free FASnI3‐Based Perovskite Solar Cell with Nb2O5 as an Electron Transport Layer

“…[ 59 ] This nature of device performances by varying the absorber doping densities has good consistency with the past works. [ 52,61 ] In this study, by taking into account of the fabrication cost, the doping density of 10 16 cm −3 is optimized for the further numerical evaluations. At doping density of 10 16 cm −3 , the PCE of 20.29% with V oc of 0.88 V, J sc of 28.55 mA cm −2 , and FF of 80.64% for the proposed inverted heterojunction PSC structure of ITO/PEDOT:PSS/FASnI 3 /Nb 2 O 5 /Ag is obtained.…”

Theoretical Simulation on Enhancing the Thin-Film Copper Zinc Tin Sulfide Solar Cell Performance Using MoS2, MoOx, and CuI as Efficient Hole Transport Layers

“…It becomes evident that V OC , FF, and efficiency experience a steady decline as the operating temperature increases. The elevated temperature results in a higher generation of electron–hole pairs, which, in turn, amplifies recombination rates between energy bands. , This surge in the internal recombination rates elevates the reverse saturation current, consequently diminishing V OC . However, there is a slight increase in J SC with the rising temperature, a behavior consistent with previous research findings. − This phenomenon can be attributed to the reduction in the energy bandgap of semiconductors within the heterojunction TFSC as the temperature increases.…”

“…The elevated temperature results in a higher generation of electron−hole pairs, which, in turn, amplifies recombination rates between energy bands. 50,51 This surge in the internal recombination rates elevates the reverse saturation current, consequently diminishing V OC . However, there is a slight increase in J SC with the rising temperature, a behavior consistent with previous research findings.…”

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

“…The simulation parameters for various layers along the interface defects are shown in Tables 1 and 2, respectively. The parameters are carefully chosen based on the existing theoretical and experimental measurements 20,37,40,51,55,61,65‐71 . At room temperature, the thermal velocity of both electron and hole is anticipated to be 10 7 cm/s 72‐74 .…”

“…The parameters are carefully chosen based on the existing theoretical and experimental measurements. 20,37,40,51,55,61,[65][66][67][68][69][70][71] At room temperature, the thermal velocity of both electron and hole is anticipated to be 10 7 cm/s. [72][73][74] The absorption coefficient of each layer is managed from the corresponding equation stated as α = A α (hν−E g ) 1/2 , herein A α is chosen to has the value of 10 5 .…”