The effect of MoSe2 thin films on the solar photovoltaic characteristics of ZnO/ZnS/MoSe2 has been studied. The variation in the efficiency of the solar cells as a funcion of the thickness of the MoSe2 layer, characteristic (J-V), and the quantum efficiency (QE) of the solar cell for different energies of the incident radiation have been studied. The results indicate that when the thickness of MoSe2 is increased the efficiency of MoSe2 based solar cells improves from 9.24% to 17.51%. The output photovoltaic parameters such as the efficiency is found to be 17.51% and a good short circuit current Jsc value of 22.19 mA/cm 2 is attained and the corresponding open circuit voltage Voc is 0.8 V.