Impact of inherent energy barrier on spin-orbit torques in magnetic-metal/semimetal heterojunctions

Abstract

Spintronic devices are based on heterojunctions of two materials with different magnetic and electronic properties. Although an energy barrier is naturally formed even at the interface of metallic heterojunctions, its impact on spin transport has been overlooked. Here, using diffusive spin Hall currents, we provide evidence that the inherent energy barrier governs the spin transport even in metallic systems. We find a sizable field-like torque, much larger than the damping-like counterpart, in Ni81Fe19/Bi0.1Sb0.9 bilayers. This is a distinct signature of barrier-mediated spin-orbit torques, which is consistent with our theory that predicts a strong modification of the spin mixing conductance induced by the energy barrier. Our results suggest that the spin mixing conductance and the corresponding spin-orbit torques are strongly altered by minimizing the work function difference in the heterostructure. These findings provide a new mechanism to control spin transport and spin torque phenomena by interfacial engineering of metallic heterostructures.

Spin–Orbit Torques and Spin Hall Magnetoresistance Generated by Twin‐Free and Amorphous Bi0.9Sb0.1 Topological Insulator Films

“…Hence, the spin-Hall and Rashba Edelstein effects due to bulk carriers can also contribute to charge-spin conversion and generation of SOTs. [19,45,46] The actual role of the SSs in generating the SOTs has been questioned in recent studies focusing on polycrystalline Bi 1−x Sb x films. [19,45] Such films, deposited by magnetron sputtering, [19,[38][39][40][41][42]47] are very promising for applications but suffer from significant variations in film quality and imperfect crystal structure.…”

“…[19,45,46] The actual role of the SSs in generating the SOTs has been questioned in recent studies focusing on polycrystalline Bi 1−x Sb x films. [19,45] Such films, deposited by magnetron sputtering, [19,[38][39][40][41][42]47] are very promising for applications but suffer from significant variations in film quality and imperfect crystal structure. [48] Moreover, crystal twinning often appears in rhombohedral epitaxial films grown along the unit cell diagonal, as in the case of Bi 0.9 Sb 0.1 (0001).…”