Impact of interface thermodynamics on Al-induced crystallization of amorphous SixGe1–x alloys

Niedermeier, Christian A.; Wang, Zumin; Mittemeijer, E. J.

doi:10.1557/jmr.2014.49

Cited by 11 publications

(13 citation statements)

References 33 publications

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“…Several attempts have been made to fabricate high-quality SiGe alloys through layer exchange [34][35][36][37][38][39][40][41]. Large-grained (~10 µm), preferentially (111)-oriented SGOIs were achieved when the Si or Ge compositions were low (< 20%); however, the grain size and (111)-orientation fraction deteriorated as SiGe approached the intermediate compositions (20-80%) [37,39].…”

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confidence: 99%

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

et al. 2016

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Metal-induced crystallization has allowed for high-quality Si and Ge thin films on insulators at low temperatures; however, there has been difficulty for SiGe alloys of intermediate compositions.Here we demonstrate a large-grained (> 100 µm), 99% (111)-oriented Si0.4Ge0.6 layer on a glass substrate through layer exchange between Al and amorphous Si0.4Ge0.6 layers. Slow annealing below 350 °C is a key to suppressing nucleation and facilitating lateral growth. The use of the (111)-oriented SiGe layers as epitaxial templates will pave the way for integrating various materials monolithically on three-dimensional Si large-scale integrated circuits and on multi-functional displays.

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confidence: 99%

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

et al. 2016

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“…Ge, which is expected to require a much lower annealing temperature) and on crystallization phenomena induced by other non-precious metals (e.g. Sn) 33 34 . As far as film growth technologies are concerned, it seems to be difficult for physical vapor deposition (PVD) methods to achieve sufficient nano-porosity especially when pursuing micron-above thickness of films.…”

Section: Discussionmentioning

confidence: 99%

Eutectic Nano-Droplet Template Injection into Bulk Silicon to Construct Porous Frameworks with Concomitant Conformal Coating as Anodes for Li-Ion Batteries

Qü

Wang

et al. 2015

Sci Rep

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Building porosity in monolithic materials is highly desired to design 3D electrodes, however ex-situ introduction or in-situ generation of nano-scale sacrificial template is still a great challenge. Here Al-Si eutectic droplet templates are uniformly injected into bulk Si through Al-induced solid-solid convection to construct a highly porous Si framework. This process is concomitant with process-inherent conformal coating of ion-conductive oxide. Such an all-in-one method has generated a (continuously processed) high-capacity Si anode integrating longevity and stable electrolyte-anode diaphragm for Li-ion batteries (e.g. a reversible capacity as large as ~1800 mAh/g or ~350 μAh/cm2-μm with a CE of ~99% at 0.1 C after long-term 400 cycles).

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“…In these studies, co-existence of either poly-Si or poly-Ge with the desired poly-SiGe thin film has been reported [9,[11][12][13][14]. Such phase segregation of poly-Si or poly-Ge phases can be largely impeded by using a pre-formed amorphous (a)-SiGe phase in the a-SiGe/Al bilayer structure [15,16] and are extensively reported in literature [17,18]. Yet some of the issues germane to crystallization kinetics of AIC in the ternary system (Al, Si and Ge) with a-SiGe/Al bilayer structure has not been explored adequately.…”

Section: Introductionmentioning

confidence: 99%

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

Sain

Singh

Ilango

et al. 2019

Journal of Applied Physics

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The present study reports Al induced crystallization (AIC) of amorphous (a)-SiGe in Al-Ge-Si ternary system at low temperature ~ 350 ºC. In addition to crystallization, the isothermal annealing of a-SiGe/AlOx/Al/corning-glass (CG) structure was found to be accompanied by an Al induced layer exchange (ALILE) phenomenon. The evolution of residual stress in the Al layer during isothermal annealing is evaluated using X-ray diffraction based on modified sin 2 ψ formalism to ascertain the role of stress in the ALILE process. A corroboration of the stress with the growth kinetics, analyzed using Avrami's theory of phase transformation gives a comprehensive understanding of the ALILE crystallization process in this system. The grown polycrystalline SiGe thin film is a potential candidate for novel technological applications in semiconductor devices.

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Impact of interface thermodynamics on Al-induced crystallization of amorphous Si_xGe_1–x alloys

Abstract: Abstract

Cited by 11 publications

References 33 publications

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization

Eutectic Nano-Droplet Template Injection into Bulk Silicon to Construct Porous Frameworks with Concomitant Conformal Coating as Anodes for Li-Ion Batteries

Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass

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