Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications
Neeraj,
Shobha Sharma,
Anubha Goel
et al.
Abstract:This article examines the impact of various interface trap charges on silicon carbide-based gate – stack, dual metal, surrounding gate, FET (4H-SiC-GSDM-SGFET). It has been contrasted for performance with silicon carbide (4H-SiC)-based dual metal, surrounding gate, FET (4H-SiC-DM- SGFET). For both devices, output characteristics including transconductance (gm), output conductance (gd), drain current (Ids), gate capacitance (Cgg), cutoff frequency (fT) and threshold voltage (Vth) have been examined. Surface pot… Show more
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