2009 IEEE/SEMI Advanced Semiconductor Manufacturing Conference 2009
DOI: 10.1109/asmc.2009.5155978
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Impact of intra-die thermal variation on accurate MOSFET gate-length measurement

Abstract: It is known that significant intra-die thermal absorption variation is caused by non-optimized rapid thermal anneal (RTA) conditions and the variation depends on the local pattern density of various types of exposed stacks of the wafer. This variation can create errors in the electrical measurement MOSFET gate length itself. Two electrical methods for measuring gate length will be discussed, namely, the resistive technique, where a long-wide poly-silicon resistor is used as a normalizing resistor; and the capa… Show more

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