Impact of ion energy on single-event upset

Abstract

The impact of ion energy on single-event upset was investigated by irradiating CMOS SRAMs with low and highenergy heavy ions. A variety of CMOS SRAM technologies was studied, with gate lengths ranging from 1 to 0.5 pm and integration densities from 16 Kbit to 1 Mbit. No significant differences were observed between the low and high-energy single-event upset response. The results are consistent with simulations of heavy-ion track structures that show the central core of the track strucitures are nearly identical for low and high-energy ions. Three-dimensional simulations confirm that charge collection is similar in the two cases. Standard lowenergy heavy ion tests are more cost-effective and appear to be sufficient for CMOS technologies down to 0.5 pm. We discuss implications for deep submicron scaling, multiple-bit upsets, and hardness assurance.

The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs

“…were not sufficiently small to be impacted by the ionization track structure of the incident particles considered [13]. For modern SOI devices with critical charges on the order of those found in [16], [3], [37], the role of ionization track structure must once again be reconsidered.…”

Single-event effects ground testing and on-orbit rate prediction methods: the past, present, and future

“…Limited data showing a slight dependence on track structure has been presented in [63], [64]. An extensive study on selected modern technologies using high and low energy ions with the same LET (track radius is different for ions with different energies) was presented in [65]; no effect was observed for these devices.…”

Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

“…Energy deposition of such small scales implies a failure of the approaches based entirely on the average dose or average LET concepts. Average LET concept is assumed to be appropriate for only relatively low-scaled ICs (>100 nm), having critical charges > 10 fC [5]. Generally, an average energy deposition at such low magnitudes turns out to be of the same order as energy-loss fluctuations (straggling) [6].…”