Impact of ion implantation and annealing parameters on bifacial PERC and PERT solar cell performance

Siddiqui, Amna; Bektaş, Gence; Nasser, Hisham; Turan, Raşit; Usman, Muhammad

doi:10.1016/j.seta.2022.102583

Cited by 5 publications

(3 citation statements)

References 36 publications

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“…Finally, the series and shunt resistances measured for the cell were incorporated as lump resistors. A detailed set of material and model parameters for the solar cell is previously reported in [14] as Table 2. The resulting simulated/experimental front side J sc , V oc , FF and e ciency, are: 41.12/41.12 mA/cm…”

Section: Simulation Procedures and Frameworkmentioning

confidence: 99%

Potential of TiO2 as a Capping Layer for Industrial c-Si PERC Solar Cells

Siddiqui,

Usman,

Hallén

2024

Preprint

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Titanium dioxide (TiO2) has gained popularity specially in photovoltaic applications, owing to its transparency in the visible region, and scratch resistance. In this work, the potential of TiO2 as a capping layer for c-Si p-type SiNx passivated emitter and rear contact (PERC) solar cells is studied through extensive optical and device simulations. The bifacial PERC solar cell model used in this study is calibrated with an experimental device having an efficiency of 22.19%. Device simulation results show that TiO2 deposited by the mesoporous technique outperforms atmospheric pressure chemical vapor deposition (APCVD) and atomic layer deposition (ALD) based TiO2 layers when capped over SiNx (n = 2.1) passivated solar cells. Furthermore, it is shown that the efficiency of SiNx(n = 2.1)/TiO2 based solar cells is maintained, even when the TiO2 layer thickness varies from 75 to 95 nm. To enhance the efficiency further, the type of SiNx layer (characterized by the n value), and the thicknesses of SiNx and TiO2 layers are optimized simultaneously to find the best combination of these parameters. The best front side solar cell efficiency of 22.43%, is obtained when a stack of SiNx(n = 1.99)/TiO2 (t = 58/76 nm) is used. Similarly, a rear side efficiency of 16.59% is achieved when the rear side Al2O3/SiNx stack is capped with mesoporous TiO2. These efficiencies are 0.24 and 1.25% higher, respectively, when compared to the original SiNx passivated PERC solar cell, demonstrating the prospective of using TiO2 in commercial photovoltaic applications.

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Section: Simulation Procedures and Frameworkmentioning

confidence: 99%

Potential of TiO2 as a Capping Layer for Industrial c-Si PERC Solar Cells

Siddiqui,

Usman,

Hallén

2024

Preprint

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show abstract

Section: Simulation Procedures and Frameworkmentioning

confidence: 99%

“…In this work, the impact of APCVD, ALD and mesoporous TiO 2 on the bifacial PERC solar cell e ciency is investigated, through optical and TCAD based device simulations. The solar cell model used in this work is already fully calibrated [14] using Silvaco device and process simulator ATLAS/ATHENA [15], and is based on an actual solar cell manufactured and reported by C. Zhang et al [16]. Simulation results show that mesoporous TiO 2 outperforms the ALD and APCVD based lms due to its relatively low re ectance in visible and IR regions.…”

Section: Introductionmentioning

confidence: 99%

Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells

Siddiqui,

Usman,

Hallén

2024

J Comput Electron

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Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

Radfar,

Liu,

Berencén

et al. 2024

Physica Status Solidi (a)

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Nanostructured silicon can reduce reflectance loss in optoelectronic applications, but intrinsic silicon cannot absorb photons with energy below its 1.1 eV bandgap. However, incorporating a high concentration of dopants, i.e., hyperdoping, to nanostructured silicon is expected to bring broadband absorption ranging from UV to short‐wavelength IR (SWIR, <2500 nm). In this work, we prepare nanostructured silicon using cryogenic plasma etching, which is then hyperdoped with selenium (Se) through ion implantation. Besides sub‐bandgap absorption, ion implantation forms crystal damage, which can be recovered through flash lamp annealing. We study crystal damage and broadband (250–2500 nm) absorption from planar and nanostructured surfaces. We first show that nanostructures survive ion implantation hyperdoping and flash lamp annealing under optimized conditions. Secondly, we demonstrate that nanostructured silicon has a 15% higher sub‐bandgap absorption (1100–2500 nm) compared to its non‐hyperdoped nanostructure counterpart while maintaining 97% above‐bandgap absorption (250–1100 nm). Lastly, we simulate the sub‐bandgap absorption of hyperdoped Si nanostructures in a 2D model using the finite element method. Simulation results show that the sub‐bandgap absorption is mainly limited by the thickness of the hyperdoped layer rather than the height of nanostructures.

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Impact of ion implantation and annealing parameters on bifacial PERC and PERT solar cell performance

Cited by 5 publications

References 36 publications

Potential of TiO2 as a Capping Layer for Industrial c-Si PERC Solar Cells

Potential of TiO2 as a Capping Layer for Industrial c-Si PERC Solar Cells

Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells

Extended Infrared Absorption in Nanostructured Si Through Se Implantation and Flash Lamp Annealing

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