Impact of Junction Temperature on High-Frequency Performance of Double avalanche Region IMPATT Oscillator

Abstract

This study investigates the impact of junction temperature on the high-frequency performance of a DAR (Double Avalanche Region) IMPATT oscillator, operating at several frequency bands. By using a simulation technique created by the authors, the temperature dependency of static (DC) and high frequency properties are observed. The large-signal admittance features reveal the existence of distinct, widely spaced negative conductance bands, which can result in a broad tuning capability. The linear and non-linear changes of high frequency parameters have been examined as a function of temperature. These will be extremely helpful for the optimum thermal design of ATT (Avalanche transit time) devices.