Impact of junction temperature on microelectronic device reliability and considerations for space applications

Abstract

The space community and other high reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters for decades to improve device reliability and extend operating life. Semiconductor technology scaling and process improvements, however, compel us to reassess common failure mechanisms and established derating guidelines to provide afirmation that common derating factors remain adequate for current technologies used in high reliability space applications. It is incumbent upon the user to develop an understanding of advanced technology failure mechanisms through modeling, accelerated testing, and failure analysis prior to product insertion in critical applications. This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and recommendations for safe operating junction temperatures for newer technologies are also presented.Background

Scaled CMOS reliability and considerations for spacecraft systems: Bottom-up and top-down perspectives

“…Although it is possible to reduce threshold voltage to about 0.25 V, higher values are required to be consistent with noise margin requirements as well as circuit requirements at higher temperatures. Most space systems require that digital and linear integrated circuits operate at junction temperatures below approximately 110°C, or 40°C below the manufacturer's maximum rating [4,5,6]. Power dissipation is a major concern for all integrated circuits.…”

Review and Assessment of JPL's Thermal Margins

“…In order to achieve twice the lifetime, the junction temperature must be lowered such that Mean-Time-To-Failure (MTTF) is twice the nominal value. For a 125°C max rated Tj device, assuming an E a = 0.6 eV, the typical 10-year MTTF can be extended by a safety margin of two by lowering the junction temperature by 15°C, to 110°C 7 . The current D-8545 typical derated Tj for silicon microcircuits remains 110°C or 40°C below the manufacturer's absolute maximum Tj rating, whichever is lower.…”

Junction temperature measurement of a LED street light using forward voltage method

“…As a thumb rule for the relationship between the lifetime of an electronic component device and reliability is that for every 10°C increase in junction temperature in the semi-conductor component, there is an approximately 50% decrease in device reliability [5]. This is based on the Arrhenius equation, which shows that time to failure are dependent on the exponential function [6].…”