Impact of MBE-grown 
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 metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Wyborski, Paweł; Gawełczyk, Michał; Podemski, Paweł; Wroński, Piotr Andrzej; Pawlyta, Mirosława; Gorantla, Sandeep; Jabeen, Fauzia; Höfling, Sven; Sęk, Grzegorz

doi:10.1103/physrevapplied.20.044009

Cited by 5 publications

(2 citation statements)

References 94 publications

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“…Finally, it needs to be mentioned that a single QD spectrum consists of a few emission lines, even for the lowest excitation powers. This has already been observed especially for dots characterized by large dimensions, similar to those in our case. − They can originate from either emission of other excitonic complexes (like biexciton or charged complexes) or exciton excited states. Detailed analysis of the origin of the lines is beyond the scope of this work, but in comparison to reports from the literature concerning QDs of similar sizes in an InP-based material system, both are possible for the emission line separation detected for QDs investigated here; see, e.g., ref .…”

Section: Resultssupporting

confidence: 82%

Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Bucci,

Zannier,

Rossi

et al. 2024

ACS Appl. Mater. Interfaces

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InAs x P 1−x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAs x P 1−x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAs x P 1−x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAs x P 1−x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAs x P 1−x QDs with a composition in the range of x = 0.24−1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAs x P 1−x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

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Section: Resultssupporting

confidence: 82%

Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Bucci,

Zannier,

Rossi

et al. 2024

ACS Appl. Mater. Interfaces

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“…Traditional semiconductor materials including Si, Ge, GaAs and so on have been widely used in electronic devices such as p-n diodes, transistors, photoelectric sensors, etc due to their excellent electronic properties [1][2][3][4][5][6][7][8][9]. These devices are often doped with impurities in the intrinsic semiconductor materials, because the carriers of device generally originate from impurity ionization.…”

Section: Introductionmentioning

confidence: 99%

Coherent potential approximation study of impurity effect on monolayer hexagonal boron phosphide

Xu,

Liu,

Jiang

et al. 2024

J. Phys.: Condens. Matter

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Impurity doping is a necessary technology for the application of semiconductor materials in microelectronic devices. The quantification of doping effects is crucial for controlling the transport properties of semiconductors. Here, taking two-dimensional hexagonal boron phosphide semiconductor as an example, we employ coherent potential approximation method to investigate the electronic properties of two-dimensional semiconductor materials at low doping concentrations, which cannot be exploited with conventional density function theory. The results demonstrate that the positive or negative impurity potential in two-dimensional semiconductors determines whether it is p-type or n-type doping, while the impurity potential strength decides whether it is shallow-level or deep-level doping. Impurity concentration has important impacts on not only the intensity but also the broadening of impurity peak in band gap. Importantly, we provide the operating temperature range of hexagonal boron phosphide as a semiconductor device under different impurity concentrations and impurity potentials. The methodology of this study can be applied to other two-dimensional semiconductors, which is of great significance for quantitative research on the application of two-dimensional semiconductors for electronic devices.

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Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands

Scaparra,

Sirotti,

Ajay

et al. 2024

ACS Appl. Nano Mater.

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InAs semiconductor quantum dots (QDs) emitting in the near-infrared are promising platforms for on-demand singlephoton sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the telecom windows with similar performance remains an open challenge. In particular, nanophotonic devices incorporating quantum light emitting diodes in the telecom C-band based on GaAs substrates are still lacking due to the relaxation of the lattice constant along the InGaAs graded layer which makes the implementation of electrically contacted devices challenging. Here, we report an optimized heterostructure design for QDs emitting in the telecom O-and C-bands grown by means of molecular beam epitaxy. The InAs QDs are embedded in mostly relaxed InGaAs matrices with fixed indium content grown on top of compositionally graded InGaAs buffers. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In 0.22 Ga 0.78 As and In 0.30 Ga 0.70 As matrices, accounting for the chosen indium grading profile. This approach results in a tunable QD photoluminescence (PL) emission from 1200 up to 1600 nm. Power and polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes from quantum dots emitting in the telecom O-and C-bands. The presented study establishes a flexible platform that can be an essential component for advanced photonic devices based on InAs/GaAs that serve as building blocks for future quantum networks.

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Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Cited by 5 publications

References 94 publications

Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Coherent potential approximation study of impurity effect on monolayer hexagonal boron phosphide

Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands

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Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Cited by 5 publications

References 94 publications

Zincblende InAsxP1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Zincblende InAsxP1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Coherent potential approximation study of impurity effect on monolayer hexagonal boron phosphide

Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands

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Product

Resources

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Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

Zincblende InAs_xP_1–x/InP Quantum Dot Nanowires for Telecom Wavelength Emission