Impact of Mg content on native point defects in Mg<sub>x</sub>Zn<sub>1−x</sub>O (0 ≤ x ≤ 0.56)

Perkins, John D.; Foster, Geoffrey M.; Myer, M.; Mehra, Sonali; Chauveau, J.-M.; Hierro, A.; Redondo-Cubero, A.; Windl, Wolfgang; Brillson, L. J.

doi:10.1063/1.4915491

Cited by 11 publications

(5 citation statements)

References 43 publications

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“…This prediction is consistent with the photoluminescence results, revealing that doping ZnO with Mg significantly enhances the V Zn -related green luminescence band[77].First-principles calculations showed that Mg Zn can interact with the donor-like defects (V O and Zn i ) of ZnO, forming the Mg Zn − Zn i and Mg Zn − V O defect complexes[76]. This is in agreement with the experimental result that Mg doping quenches the V O -related visible emission band in ZnO[78].…”

supporting

confidence: 91%

Dopants and Impurity-Induced Defects in ZnO

Rahman¹,

Phillips²

2020

Defects in Functional Materials

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In recent years, there has been resurgent interest in ZnO due to its efficient UV emission and potential application in opto-electronic devices.The problem of self-compensating defects, especially those related to acceptor-like dopants, remains a major challenge to date. In this chapter, we provide an overview of the fundamental properties of point defects and dopants as well as their complexes in bulk crystals and nanostructures. Nominally undoped ZnO is typically n-type, which has been widely ascribed to O vacancies or Zn interstitials; however, these defect assignments are controversial as O vacancies are deep donors while Zn interstitials are highly mobile at room temperature and considered to be unstable. Accordingly, H and group III impurities have also been suggested to be responsible for the observed n-type conductivity. Although there are still many unanswered questions concerning defect-related luminescence bands in ZnO, great progress has been made in recent years to identify and characterize them using spatially resolved luminescence spectroscopies and first-principles calculations. The ubiquitous green emission has several possible origins, including O and Zn vacancies as well as Cu impurities. The properties of group I (Li, Na, and Cu), group III (Ga, Al, 177 March 4, 2020 19:49 Defects in Functional Materials 9in x 6in 1st Reading b3851-ch06 page 178 178 M. A. Rahman, M. R. Phillips & C. Ton-That and In), and group V (N, P, and Sb) impurities as well as their complexes with native point defects and H are discussed, along with a concluding outlook for future research into the optical properties of ZnO.

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confidence: 91%

Dopants and Impurity-Induced Defects in ZnO

Rahman¹,

Phillips²

2020

Defects in Functional Materials

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“…The spontaneous polarization and piezoelectric constants for ZnO are relatively large and opposite in sign along versus transverse to the c -axis [49]. Figure 7 displays pronounced segregation extending over ~30 nm for ZnO [000true1-] V O -related [50] and [11true2-0] V Zn -related [51,52,53] emission intensities. The O-polar surface illustrated in Figure 7a generates a negative polarization, which attracts positively charged, ionized V O defects.…”

Section: Defect Distributions In Znomentioning

confidence: 99%

“…Higher V O segregation in O- vs. Zn-polar ZnO also shown in ([52]) Reprinted with permission by American Institute of Physics Refs. ([51,52,53], respectively).…”

Section: Figurementioning

confidence: 99%

Native Point Defect Measurement and Manipulation in ZnO Nanostructures

et al. 2019

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This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

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“…[nm] to the films. Based on the recently reported CL spectra of wurtzite Mg x Zn 1−x O (x < 0.56), 40,41) BL (2.0-3.0 eV) was tentatively ascribed to the oxygen vacancy-related emission.…”

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confidence: 90%

Growth of rocksalt-structured Mg_xZn₁₋ _xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence

Kaneko

Onuma

Tsumura

et al. 2016

Appl. Phys. Express

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Single-phase rocksalt-structured Mg x Zn1− x O (x > 0.5) alloy films were grown on MgO substrates using the mist chemical vapor deposition method. A specular surface with a step and terrace structure was obtained. The bandgap was tuned from 5.9 to 7.8 eV as x varied from 0.5 to 1. Deep ultraviolet cathodoluminescence, stemming from near band edge transitions, was observed for Mg0.57Zn0.43O in the 4.8–5.5 eV range, peaking at ∼5.1 eV (∼240 nm) in the 12–100 K range.

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Impact of Mg content on native point defects in Mg_xZn_1−xO (0 ≤ x ≤ 0.56)

Cited by 11 publications

References 43 publications

Dopants and Impurity-Induced Defects in ZnO

Dopants and Impurity-Induced Defects in ZnO

Native Point Defect Measurement and Manipulation in ZnO Nanostructures

Growth of rocksalt-structured Mg_xZn₁₋ _xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence

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Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)

Cited by 11 publications

References 43 publications

Dopants and Impurity-Induced Defects in ZnO

Dopants and Impurity-Induced Defects in ZnO

Native Point Defect Measurement and Manipulation in ZnO Nanostructures

Growth of rocksalt-structured MgxZn1− xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence

Contact Info

Product

Resources

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Impact of Mg content on native point defects in Mg_xZn_1−xO (0 ≤ x ≤ 0.56)

Growth of rocksalt-structured Mg_xZn₁₋ _xO (x > 0.5) films on MgO substrates and their deep-ultraviolet luminescence