2017
DOI: 10.1007/s12043-017-1441-9
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Impact of optical gain broadening on characteristics of response function in the presence and absence of tunnelling injection for quantum dot semiconductor lasers

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Cited by 2 publications
(1 citation statement)
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“…Generally, the conventional quantum well laser has a large line width enhancement factor that results in the large chaotic region with the change of external injection or feedback level [15]. In recent years, another kind of laser, i.e., semiconductor quantum dot (QD) laser [16][17][18][19][20], has been presented and demonstrated to develop the family of the semiconductor laser. Compared with the quantum well laser, the semiconductor QD laser has some attractive characteristics such as small line width enhancement factor, hightemperature stability, low threshold current density, high modulation bandwidth, and the reduced sensitivity to injection and feedback [21,22].…”
Section: Introductionmentioning
confidence: 99%
“…Generally, the conventional quantum well laser has a large line width enhancement factor that results in the large chaotic region with the change of external injection or feedback level [15]. In recent years, another kind of laser, i.e., semiconductor quantum dot (QD) laser [16][17][18][19][20], has been presented and demonstrated to develop the family of the semiconductor laser. Compared with the quantum well laser, the semiconductor QD laser has some attractive characteristics such as small line width enhancement factor, hightemperature stability, low threshold current density, high modulation bandwidth, and the reduced sensitivity to injection and feedback [21,22].…”
Section: Introductionmentioning
confidence: 99%