Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors

Faber, Hendrik; Hirschmann, Johannes; Klaumünzer, Martin; Braunschweig, Björn; Halik, Marcus

doi:10.1021/am2018223

Cited by 69 publications

(42 citation statements)

References 31 publications

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“…Alternative, the high temperature annealing can be substituted by additional low temperature treatments such as UV irradiation, vacuum annealing, or plasma treatments, which anyway complicate the fabrication process. 195,242,243 Additionally, an active channel layer constituted by nanoparticles inherently features a high number of (grain) boundaries, each one acting as a potential barrier against charge transport. Furthermore, high film porosity and roughness at the interface semiconductor/gate dielectrics have been demonstrated to be detrimental for the TFT performance.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

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430

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Section: Fabrication Techniquesmentioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

Self Cite

562

430

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“…23 It has been reported that the surface defect produces hydroxyl ions (OH -) when exposed to air. 24,25 In the current study the surface species and decrease in O vacancies caused a shift in the (002) diffraction peak to small 2θ values and reduced the c/a ratio. Decreases in O vacancies were also observed by the increased FWHM beyond 20 sccm.…”

mentioning

confidence: 55%

“…When exposed to air, surface O contents react with moisture in air to form hydroxyl ions (OH -). 24 It can thus be concluded that annealing in the Ar atmosphere and plasma oxidation caused a decrease in visible emission due to a reduction in O vacancies. In the Ar-annealed sample, the possibility of Zn interstitial defects increased, while O interstitials and Zn vacancies decreased as the annealing temperature was increased.…”

mentioning

confidence: 99%

Significance of postgrowth processing of ZnO nanostructures on antibacterial activity against gram-positive and gram-negative bacteria

Mehmood¹,

Ismail²,

Mirza³

et al. 2015

IJN

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In this work, we highlighted the effect of surface modifications of one-dimensional (1D) ZnO nanostructures (NSs) grown by the vapor–solid mechanism on their antibacterial activity. Two sets of ZnO NSs were modified separately – one set was modified by annealing in an Ar environment, and the second set was modified in O 2 plasma. Annealing in Ar below 800°C resulted in a compressed lattice, which was due to removal of Zn interstitials and increased O vacancies. Annealing above 1,000°C caused the formation of a new prominent phase, Zn 2 SiO 4 . Plasma oxidation of the ZnO NSs caused an expansion in the lattice due to the removal of O vacancies and incorporation of excess O. Photoluminescence (PL) spectroscopy was employed for the quantification of defects associated with Zn and O in the as-grown and processed ZnO NS. Two distinct bands were observed, one in the ultraviolet (UV) region, due to interband transitions, and other in the visible region, due to defects associated with Zn and O. PL confirmed the surface modification of ZnO NS, as substantial decrease in intensities of visible band was observed. Antibacterial activity of the modified ZnO NSs demonstrated that the surface modifications by Ar annealing limited the antibacterial characteristics of ZnO NS against Staphylococcus aureus . However, ZnO NSs annealed at 1,000°C or higher showed a remarkable antibacterial activity against Escherichia coli . O 2 plasma–treated NS showed appreciable antibacterial activity against both E. coli and S. aureus . The minimum inhibition concentration was determined to be 0.5 mg/mL and 1 mg/mL for Ar-annealed and plasma-oxidized ZnO NS, respectively. It was thus proved that the O content at the surface of the ZnO NS was crucial to tune the antibacterial activity against both selected gram-negative ( E. coli ) and gram-positive ( S. aureus ) bacterial species.

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“…It is a promising candidate for applications in optoelectronic devices as solar cells, field effect transistors, Schottky diodes or light-emitting diodes. [30][31][32][33][34] It has been shown recently that ZnO nanorods can be deposited into self-assembled dense thin films by standard methods like drop casting, spin coating or solvent evaporation from a vertically immersed substrate. 20,23,35 In dip coating structure formation is triggered by the interplay of convective assembly in the capillary regime and shear forces in the intermediate and viscous drag regime.…”

Section: Introductionmentioning

confidence: 99%

Polarized Raman scattering and SEM combined full characterization of self-assembled nematic thin films

2016

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Elongated particles are predestined for a fast transfer of optical and electronical signals in a preferred direction, which is mandatory for a quick response in optoelectronic devices. The performance of the material is based on the quality of defect less alignment of the particles. On this account we present an easy non-invasive methodology for characterization of both surface and bulk order. The characterization of bulk order is performed by orientation dependent variation of the polarized Raman scattering signal on large areas by mapping. Scanning electron microscopy and image analysis on the surface complete the characterization. New insights in dip coated nematic structures clearly show the interplay of evaporation induced and shear-induced self-assembly and reveal a comprehensive mechanistic picture for nanorod assembly: the shear force dominated regime orients the particle in direction of withdrawal. At low withdrawal velocity, however, shear forces and evaporation counteract to produce a three-layered film where the top and bottom layers are oriented perpendicular to each other. The middle layer gives a clear evidence for a reorientation by convective flow.

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Impact of Oxygen Plasma Treatment on the Device Performance of Zinc Oxide Nanoparticle-Based Thin-Film Transistors

Cited by 69 publications

References 31 publications

Metal oxide semiconductor thin-film transistors for flexible electronics

Metal oxide semiconductor thin-film transistors for flexible electronics

Significance of postgrowth processing of ZnO nanostructures on antibacterial activity against gram-positive and gram-negative bacteria

Polarized Raman scattering and SEM combined full characterization of self-assembled nematic thin films

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