Impact of P/E cycling on read current fluctuation of NOR Flash memory cell: A microscopic perspective based on low frequency noise analysis

Yang, Xiaonan; Liu, Jing; Zheng, Zhiyong; Wang, Yan; Jiang, Dandan; Chiu, Shengfen; Wu, Hanming; Liu, Ming

doi:10.1109/irps.2015.7112748

Cited by 3 publications

(1 citation statement)

References 19 publications

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“…Due to using single-crystal silicon channel, our memory cell has high read current (>110 μA/μm), and high read current enables fast read. In 65nm node, the read current of 2D NOR Flash memory cell is about 180 uA/um at V OV = 2.0 V [16], which is comparable to that of our 3D NOR flash. It is worth pointing out that since the relaxation of 2D scaling limitation the device width/area for 3D NOR could be much larger than that for 2D NOR which can provide much larger on-current per device to increase the read speed and improve the reliability.…”

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confidence: 63%

A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Huang

Zhu

et al. 2022

IEEE Electron Device Lett.

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A novel 3D NOR memory array with singlecrystal silicon channel, high-density and fast-read was proposed and fabricated. The proposed 3D NOR memory is investigated in terms of device structure, integration scheme, and circuit architecture. To obtain single-crystal silicon channel for 3D NOR, 1) vertical flash devices were presented, 2) a stack with multiple doped epitaxial Si layers was used for making the vertical devices, and 3) unlike 3D NAND, bit-line planes, source-line planes and vertical word-lines were utilized. Due to the use of single-crystal silicon channels, our memory devices have large read currents of 110 µA/µm. Through programming/erasing tests, the programming speed of 10 µs and erasing speed of 100 ms were obtained, which are comparable to that of the 2D NOR Flash with single-crystal silicon channels.

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confidence: 63%