Impact of plasma exposure on organic low-k materials

Smirnov, Evgeny; Ferchichi, Abdelkarim; Huffman, C.; Baklanov, Mikhaı̈l R.

doi:10.1117/12.854882

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…After the deposition, a dual-phase SiCOH-CH x material is formed after the deposition. Tetramethylcyclotetrasiloxane (TMCTS), octamethylcyclotetrasiloxane (OMCTS), decamethylcyclopentasiloxane (DMCPS), and diethoxymethylsilane (DEMS) are the widely used skeleton precursors [24][25][26][27]. These skeleton precursors have a common property with a sufficiently low dissociation level under rf power in order to keep the sufficient hardness for the produced porous low-k dielectric material.…”

Section: Pecvd Technologymentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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To provide high speed, low dynamic power dissipation, and low cross-talk noise for microelectronic circuits, low-dielectric-constant (low-k) materials are required as the inter-and intra-level dielectric (ILD) insulator of the back-end-of-line interconnects. Porous low-k materials have low-polarizability chemical compositions and the introducing porosity in the film. Integration of porous low-k materials into microelectronic circuits, however, poses a number of challenges because the composition and porosity affected the resistance to damage during integration processing and reduced the mechanical strength, thereby degrading the properties and reliability. These issues arising from porous low-k materials are the subject of the present chapter.

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Section: Pecvd Technologymentioning

confidence: 99%

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Cheng¹,

Lee²

2020

Nanofluid Flow in Porous Media

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“…The modification depth is related to the ion energy, diffusion of active radicals (O, H, F, etc. ), and porosity and constituents in the low-k material [32,33].…”

Section: Plasma Damage Mechanismmentioning

confidence: 99%

Plasma Damage on Low-k Dielectric Materials

Cheng¹,

Lee²,

Haung³

2019

Plasma Science and Technology - Basic Fundamentals and Modern Applications

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Low dielectric constant (low-k) materials as an interconnecting insulator in integrated circuits are essential for resistance-capacitance (RC) time delay reduction. Plasma technology is widely used for the fabrication of the interconnects, such as dielectric etching, resisting ashing or stripping, barrier metal deposition, and surface treatment. During these processes, low-k dielectric materials may be exposed to the plasma environments. The generated reactive species from the plasma react with the low-k dielectric materials. The reaction involves physical and chemical effects, causing degradations for lowk dielectric materials. This is called "plasma damage" on low-k dielectric materials. Therefore, this chapter is an attempt to provide an overview of plasma damage on the low-k dielectric materials.

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“…This was supported also by the presence of C¼O groups observed in the FTIR spectrum of samples exposed to the O 2 -based chemistry, as presented in ref. 6. C¼O groups indicate material hydrophilization which will result in k-value increase.…”

Section: Patterningmentioning

confidence: 99%

“…Also, neither of these plasmas was found to change the chemical composition of the organic low-k as measured by FTIR. 6) Consequently, the N 2 /H 2 plasma was selected for etching trenches in the organic low-k with minimum plasma damage.…”

Section: Patterningmentioning

confidence: 99%

Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials

Pantouvaki

Huffman

Zhao

et al. 2011

Jpn. J. Appl. Phys.

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An advanced organic polymer material of k = 2.2 has been successfully integrated in Cu lines with dielectric spacing from 80 to 20 nm. Cu lines with both TaN/Ta barrier and no barrier were fabricated. Current–voltage (I–V) and time dependent dielectric breakdown (TDDB) measurements were performed to study the scalability of this material. In the case of TaN/Ta barrier, no TDDB degradation was observed at 100 °C as the dielectric spacing changed from 80 to 30 nm. In the case of no barrier, TDDB performance at 100 °C was better than that of SiO2 without a barrier. However, TDDB at 200 °C showed a clear degradation. In contrast, no such degradation was present when TaN/Ta barrier was used.

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Impact of plasma exposure on organic low-k materials

Cited by 6 publications

References 2 publications

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics

Plasma Damage on Low-k Dielectric Materials

Advanced Organic Polymer for the Aggressive Scaling of Low-k Materials

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