Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography

Satō, Takashi; Endo, Ayako; Mimotogi, Akiko; Motomizu, Shoji; Satõ, Kazuya; Tanaka, Satoshi

doi:10.1117/12.598458

Cited by 2 publications

(3 citation statements)

References 7 publications

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“…On the other hand, it is known that the intensity of diffracted light depends on the incident angle of illumination to the mask. [4][5][6] In addition, it is reported that oblique illumination influences the imaging. 10) The impact of the incident angle on the diffracted light must be discussed.…”

Section: Design Of Attpsm For 45 Nm Half Pitch Nodementioning

confidence: 99%

“…To balance the two diffracted lights, the 1st approach is to adopt a low transmittance MoSi layer as the attenuated phase shift layer. 5,6) Another approach is to chose an optimal duty ratio for maximum image contrast. 7) In imaging different duty ratio patterns, the pattern size varies according to the duty ratio.…”

Section: Design Of Attpsm For 45 Nm Half Pitch Nodementioning

confidence: 99%

“…However, simulation results have shown that a conventional attPSM has a smaller process window than the BIM in a 45 nm half pitch size node. [5][6][7] To obtain a wider process window than the BIM in this node, it is necessary to change mask parameters of the attPSM. Moreover, a phase difference, which depends on pattern size, is generated between 0th order and 1st order diffracted light.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

Satō¹,

Endo²,

Mimotogi³

et al. 2006

jjap

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In the 45 nm half pitch node, a mask induced polarization effect appears. Because of this effect, intensity of diffracted light depends on a pattern size and a diffraction order. This is pronounced in an attenuated phase shift mask (attPSM). A mask topography effect has to be considered for rigorous simulation. A small window attributable to diffraction efficiency is generated, because of an insufficient ratio of 1st order and 0th order diffracted light from the attPSM. Two approaches to produce a sufficient ratio, namely, a low transmittance layer attPSM and a biased pattern attPSM, were investigated by simulation. A mask bias of more than 10 nm on both sides is required to generate an optimal diffraction efficiency ratio for the 0th and 1st orders. The low transmittance (around 1%) attPSM had higher contrast at 45 nm half pitch in the resist image than the biased attPSM. It was also shown that a phase difference between diffraction orders caused lower contrast imaging.

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Section: Design Of Attpsm For 45 Nm Half Pitch Nodementioning

confidence: 99%

Section: Design Of Attpsm For 45 Nm Half Pitch Nodementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

Satō¹,

Endo²,

Mimotogi³

et al. 2006

jjap

Self Cite

View full text Add to dashboard Cite

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Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

Zhou

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Extension of krypton fluoride excimer laser lithography to the fabrication of 0.18 μm devices Resolution-enhancement technique ͑RET͒ and dual-layer bottom-antireflective coatings ͑DL-BARC͒ must be adopted in hypernumerical aperture ͑NAϾ 1͒ lithography for a 45 nm half-pitch device. However, interactions of RET, polarization effect, and the resist process significantly impact on lithography performance. An in-house program and PROLITH 9.0 were employed to perform comprehensive optimization of RET and DL-BARC structures in order to improve pattern fidelity with a reasonable process window ͑PW͒. High-fidelity resist patterns are obtained when we employed optimum DL-BARC structures in conjunction with optimum RET. An alternating phase-shift mask and a conventional illumination is one kind of optimum combination of RET. An attenuated phase-shift mask and a cross-dipole illumination is the other one. Line-width changes are controlled within 4 nm. Sidewall angles are greater than 88°.

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Impact of polarization for an attenuated phase-shift mask with ArF hyper-NA lithography

Cited by 2 publications

References 7 publications

Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool

Optimization of resolution-enhancement technology and dual-layer bottom-antireflective coatings in hypernumerical aperture lithography

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