Impact of post-annealing of tunnel oxide on the electrical characteristics of Pt–Ti/HfO2/TiN/SiON/n-Si capacitor for flash memory applications

Vaid, Rakesh; Rajput, Renu

doi:10.1007/s10854-020-04091-2

Cited by 1 publication

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“…The inserted 20 nm TiN with good thermal stability is chosen as the FG because metal FG has weaker ballistic transport and a higher density of states than poly-Si FG. [1,[53][54][55] The thicknesses of each layer in the channel region (a-a in Figure 1b) were confirmed by the highresolution transmission electron microscopy (HRTEM) image (Figure 1c). The smooth and sharp a-IGZO/HfO 2 interface and the amorphous nature of the IGZO layer were also demonstrated.…”

Section: Device Structure and Electrical Characteristics Of A-igzo Fg...mentioning

confidence: 96%

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Sun

Samanta

et al. 2022

Adv Elect Materials

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3D NAND has been enabling continuous NAND density and cost scaling beyond conventional 2D NAND since sub‐20‐nm nodes. However, its poly‐Si channel suffers from low mobility, instability caused by grain boundaries, and large device‐to‐device variations in electrical characteristics at highly scaled device dimensions. These drawbacks can be overcome by introducing an amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) channel, which has the advantages of ultralow OFF current, back‐end‐of‐line compatibility, higher mobility than poly‐Si, and free of grain boundaries due to the amorphous nature. In this work, ultrascaled floating‐gate (FG) transistors with a channel length down to 60 nm are reported, achieving the highest ON current of 127 µA µm−1 among all reported a‐IGZO‐based flash devices for high‐density, low‐power, and high‐performance 3D NAND applications. Furthermore, a nonvolatile and area‐efficient ternary content‐addressable memory (TCAM) with only two parallel‐connected a‐IGZO FG transistors is experimentally demonstrated to address the TCAM scalability issue. Experimentally calibrated array‐level simulations show that this design achieves at least a 240 × array‐size scalability and a 2.7‐fold reduction in search energy than TCAMs based on complementary metal‐oxide‐semiconductor technology using 16 transistors, two‐transistor‐two‐resistive random access memory, and two‐ferroelectric field‐effect‐transistor.

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Section: Device Structure and Electrical Characteristics Of A-igzo Fg...mentioning

confidence: 96%

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Sun

Samanta

et al. 2022

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

Impact of post-annealing of tunnel oxide on the electrical characteristics of Pt–Ti/HfO2/TiN/SiON/n-Si capacitor for flash memory applications

Cited by 1 publication

References 43 publications

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

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