Impact of post-deposition annealing in Cu2SnS3 thin film solar cells prepared by doctor blade method

Basak, Arindam; Deka, Himangshu; Mondal, Anup; Singh, Udai P.

doi:10.1016/j.vacuum.2018.07.049

Cited by 15 publications

(3 citation statements)

References 17 publications

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“…Cu 2 SnS 3 (CTS) compound semiconductors do not contain rare metals or harmful elements, and have been reported to have a high light absorption coefficient of more than 10 4 cm −1 . [5][6][7][8][9][10][11] To date, CTS compound semiconductors have been fabricated by various processes, including the sulfurization of evaporated precursors, 6,12) sulfurization of sputtered precursors, 13,14) chemical bath deposition (CBD), 15,16) doctor blade method, 17) sol-gel method, 18) ultrasonic spray pyrolysis, 19) and co-evaporation. 11,[20][21][22] Further, bandgaps in the range of 0.85-1.47 have been reported for CTS films with different crystal structures.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors

Motai

Ohashi

Araki

2022

Jpn. J. Appl. Phys.

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Cu2SnS3 (CTS) thin-film solar cells were fabricated by the co-evaporation of the precursors, and the effect of annealing in N2 atmosphere on their photovoltaic properties was investigated by varying the annealing temperature after the chemical bath deposition of CdS. The characteristics of the solar cells improved as the annealing temperature was increased in the 250 °C–275 °C range (annealing time: 30 min). However, annealing temperatures exceeding 275 °C caused the deterioration of the device characteristics. Therefore, annealing in the 250 °C–275 °C range after CdS deposition is important for forming an optimum p–n junction at the CTS/CdS interface for manufacturing the CTS solar cells evaluated in this study. The best-performing solar cell fabricated using a CTS film annealed at 275 °C after CdS deposition exhibited an open circuit voltage of 0.181 V, with a short circuit current density of 20.9 mA cm−2, fill factor of 0.462, and power conversion efficiency of 1.74%.

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Section: Introductionmentioning

confidence: 99%

Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors

Motai

Ohashi

Araki

2022

Jpn. J. Appl. Phys.

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“…Hence this paper aims to produce and compare optical properties, morphology, and surface topographies of different layers which could be used as DSSCs photoanodes, and their effect on the basic solar cell characteristics. The samples were prepared with the doctor blade method, which is one of the most used ones for photoanode manufacturing in the laboratory scale and allows for the fast and simple formation of layers [36].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Nanostructures Addition on TiO<sub>2</sub> Photoanode and DSSC Properties

Hrapkowicz

Jędrzejczak

Jarka

et al. 2021

SSP

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Photoelectrodes are key components of the dye-sensitized solar cells (DSSCs), and as such improving their properties, may lead to an overall improvement of the entire cell.This paper aims to fabricate and compare the properties of various photoanodes (resulting in DSSCs) to determine how the overall efficiency of the cell is affected by various additives mixed into the TiO2 paste deposited on fluorine-doped tin oxide (FTO) covered glass, thus changing the photoanode composition. The TiO2 paste has been previously mixed with various materials such as ZnO, SiO2, Pd, and carbon nanotubes (CNTs). Basing on the prepared photoanodes, DSSCs have been prepared and analyzed by UV-Vis spectroscopy and atomic force microscopy. Moreover, were tested on a SS I-V CT-02 laboratory stand equipped with a Photo Emission Tech SS150AAA solar radiation simulator and Keithley 2401 low-voltage multimeter. The test results allowed for a determination of their properties and comparison. The highest efficiency has been obtained for the DSSCs based on photoanodes with TiO2 (1.58%) and TiO2/ZnO (1.52%).

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“…As a matter of fact, their high efficiency, satisfactory performance for a long time, and low price. These semiconductors exhibit p-type conductivity, a high absorption coefficient, and a direct band gap that makes them appropriate for usage as a thin film absorber layer material [8] [9]. Compared to wafer-based crystalline thin film solar cells with polycrystalline Sb2S3 absorber layers shows better performance and gives good efficiency.…”

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confidence: 99%

Numerical Simulation of Non-toxic ZnSe Buffer Layer to Enhance Sb2S3 Solar Cell Efficiency Using SCAPS-1D Software

Halim

Biswas

Islam

et al. 2022

IJRCS

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The use of renewable energy, especially solar photovoltaic, has grown more and more necessary in the context of the diversification of the use of natural resources. Sb2S3 is emerged as an attractive candidate for today's thin-film solar cells due to its band gap of 1.65 eV and high absorption coefficient greater than 105 cm-1. Cadmium Sulfide is the most commonly used buffer layer material in thin film solar cells, but cadmium is a metal that causes severe toxicity in humans and the environment. This article tried to avoid cadmium for solar cell generation. This paper presents the findings of a computer simulation analysis of a thin film solar cell based on a p-type Sb2S3 absorber layer and an n-type ZnSe buffer layer in a structure of (Sb2S3/ZnSe/i-ZnO/ZnO: Al) utilizing simulation software (SCAPS-1D). The simulation included detailed configuration optimization for the thickness of the absorber layer, buffer layer, defect density, temperature, and series-shunt resistance. In this work, the Efficiency (η), Fill Factor (FF), Open-circuit Voltage (Voc), and short-circuit current (Jsc) have been measured by varying thickness of absorber layer in the range of 0.5µm to 4 µm and by varying thickness of buffer layer in the range of 0.05 µm to 0.1µm. The optimized solar cell shows an efficiency of 20.03% when the absorber layer thickness is 4µm and the buffer layer thickness is 0.08µm.

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Impact of post-deposition annealing in Cu2SnS3 thin film solar cells prepared by doctor blade method

Cited by 15 publications

References 17 publications

Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors

Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors

Effect of the Nanostructures Addition on TiO<sub>2</sub> Photoanode and DSSC Properties

Numerical Simulation of Non-toxic ZnSe Buffer Layer to Enhance Sb2S3 Solar Cell Efficiency Using SCAPS-1D Software

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Impact of post-deposition annealing in Cu2SnS3 thin film solar cells prepared by doctor blade method

Cited by 15 publications

References 17 publications

Effect of annealing temperature on p–n junction formation in Cu2SnS3 thin-film solar cells fabricated via the co-evaporation of elemental precursors

Effect of annealing temperature on p–n junction formation in Cu2SnS3 thin-film solar cells fabricated via the co-evaporation of elemental precursors

Effect of the Nanostructures Addition on TiO<sub>2</sub> Photoanode and DSSC Properties

Numerical Simulation of Non-toxic ZnSe Buffer Layer to Enhance Sb2S3 Solar Cell Efficiency Using SCAPS-1D Software

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Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors

Effect of annealing temperature on p–n junction formation in Cu₂SnS₃ thin-film solar cells fabricated via the co-evaporation of elemental precursors