Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor*

Abstract

This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions in silicon–germanium heterojunction bipolar transistor (SiGe HBT). The ion-induced current transients and integrated charge collections under different proton fluences are obtained based on technology computer-aided design (TCAD) simulation. The results indicate that the impact of carrier lifetime alteration is determined by the dominating charge collection mechanism at the ion incident position and only the long-time diffusion process is affected. With a proton fluence of 5×1013 cm−2, almost no change is found in the transient feature, and the charge collection of events happened in the region enclosed by deep trench isolation (DTI), where prompt funneling collection is the dominating mechanism. Meanwhile, for the events happening outside DTI where diffusion dominates the collection process, the peak value and the duration of the ion-induced current transient both decrease with increasing proton fluence, leading to a great decrease in charge collection.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

“…3(1a), 3(2a), and 3(3a) or 3(1b), 3(2b), and 3(3b) shows that the most pronounced potential collapse is produced by incidence from the centre of the emitter under the same bias conditions. SETs generated by the incidence of various secondary particles are obtained [16,17] as shown in Figs. 4.…”

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

“…At each sensitive point, the transient current and charge collection of each sensitive point were tested with an oscilloscope under different bias voltages. [12] To ensure the effectiveness of the experiment, the device was in the worst bias state. Since the SiGe HBT substrate does not directly lead out the electrode, the values of V E = V B = 0 were always maintained, and V C was connected to a positive voltage.…”

“…From the transient current peak value and the amount of charge collected it can be concluded that with an increase in laser incident energy, the collector transient current peak value, the transient current duration and the amount of charge collected amount also gradually increased. [12,22] -110 -90 -70 -50 -30 -10…”

“…Therefore, lasers of different wavelengths (1064 nm and 532 nm) and incident energy were used to study the collector transient current peak, cur-rent duration and charge collection under different applied bias conditions. [11,12] Finally, the equivalent linear energy transfer (LET) value relationship between the pulsed laser and the heavy ions was established by carrying out technology computer-aided design (TCAD) simulations. The single event transient induced by heavy-ion incidence was also studied.…”

Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors

“…On the other hand, for the SiGe HBTs with DTI around the intrinsic device (i.e. the emitter-base-collector stack), the sensitive volume is determined by the deep trench, [11,16,28,29] which leads to an aspect ratio much smaller. Therefore, the impact of proton incident angle may vary among different SiGe technologies and should be carefully considered in the SET ground testings.…”