Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs

Gerrer, Louis; Markov, Stanislav; Amoroso, Salvatore; Adamu-Lema, Fikru; Asenov, A.

doi:10.1016/j.microrel.2012.06.136

Cited by 9 publications

(1 citation statement)

References 16 publications

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“…The TAT mechanism is modeled as a two-step process, [23] i.e., the electron capture and emission of the oxide traps. The TAT current driven through each oxide trap is given by the capture and emission times for each trap, τ c,ch/csl and τ e/csl respectively, considered from the charge reservoir, i.e., channel or charge storage layer as schematically illustrated in Fig.…”

Section: Physical Model and Simulation Approachmentioning

confidence: 99%

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level

Lun

Zhao

et al. 2016

Chinese Phys. B

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In this work, the trap-assisted tunneling (TAT) mechanism is modeled as a two-step physical process for charge trapping memory (CTM). The influence of the TAT mechanism on CTM performance is investigated in consideration of various trap positions and energy levels. For the simulated CTM structure, simulation results indicate that the positions of oxide traps related to the maximum TAT current contribution shift towards the substrate interface and charge storage layer interface during time evolutions in programming and retention operations, respectively. Lower programming voltage and retention operations under higher temperature are found to be more sensitive to tunneling oxide degradation.

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Section: Physical Model and Simulation Approachmentioning

confidence: 99%