Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

The electrical potential technique was applied to detect and locate impact damage in carbon fibre reinforced polymer (CFRP) plates of Hexcel T300/914 composite. The potential field across the surface of the laminates was measured using arrays of electrical contacts. A constant current of 100 mA was applied to the plate, and the changes in the potential distribution resulting from impact damage documented. These results have been compared with those calculated using 3D finite element simulation of current flow in CFRP laminates. The results show good agreement between simulation and experimental results and will permit detailed analytical studies of optimum network and current input configurations for the practical realization of a damage sensing system. A comparison of potential distribution on the top surface for damaged and undamaged laminates shows a substantial difference in the potential field around the impact damaged area. This could form the basis of a damage detection system.

Nanoindentation Damage near Silicon Surface Embossed by Immersion in Ultralow-Dissolved-Oxygen Water

“…[9][10][11] In silicon devices, high mechanical stresses are generated when the films with quite different expansion coefficients and the complicated structures such as a shallow-trench isolation are used. 12 It is well known that high mechanical stress in Si crystals induces crystallographic damage, which degrades the electrical characteristics. [13][14][15][16] It is important to understand ultraweak damage for precise control of the structure and electrical characteristics of MEMS, NEMS and Si devices.…”