Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

Abstract

Pseudomorphic planar III-V transition layers greatly facilitate the epitaxial integration of vapor-liquid-solid grown III-V nanowires (NW) on Si(111) substrates. Heteroepitaxial (111) layer growth, however, is commonly accompanied by the formation of rotational twins. We find that rotational twin boundaries (RTBs), which intersect the surface of GaP/Si(111) heterosubstrates, generally cause horizontal NW growth and may even suppress NW growth entirely. Away from RTBs, the NW growth direction switches from horizontal to vertical in the case of homoepitaxial GaP NWs, whereas heteroepitaxial GaAs NWs continue growing horizontally. To understand this rich phenomenology, we develop a model based on classical nucleation theory. Independent of the occurrence of RTBs and specific transition layers, our model can generally explain the prevalent observation of horizontal III-V NW growth in lattice mismatched systems and the high crystal quality of horizontal nanowires.

Growth of GaAs nanowire–graphite nanoplatelet hybrid structures

“…This observation generally agrees with the results of Au-seeded growth of GaAs NWs on pyrolytic graphite substrates 19 . Therefore, we follow and extend the previously suggested nucleation-based approaches 19,[35][36][37] to model the planar and non-planar NW growth in our experiments.…”

“…Thus the explanation of the obtained shapes should rely on other principles. In order to model the observed NW growth, we extend the recent nucleation-based approaches 35 . Based on the experimental results, the model considers the NW growth on three types of GNP-structured surfaces: (i) flat central parts of the nanoplatelets, (ii) regions next to the nanoplatelet edge and (iii) areas next to the barrier, formed either by nanoplatelet or NW.…”

Room‐Temperature Negative Differential Resistance in Surface‐Supported Metal‐Organic Framework Vertical Heterojunctions

“…[ 19–21 ] Nevertheless, these materials have limitations due to the lattice mismatch during their growth. [ 22,23 ] The NDR has also been observed in a variety of molecular and mesoscopic systems, including molecular junctions, [ 24 ] nanoparticles, [ 25 ] oxides, [ 26 ] hybrid systems, [ 27,28 ] graphene devices, [ 29 ] and van der Waals (vdW) heterostructures based on atomically 2D materials. [ 17,30–36 ] However, for some of these materials, in particular 2D materials, device integration is a challenging problem since issues related to the interface with contact electrodes, [ 37 ] and the difficulties in transferring and stacking them on target substrates severely complicates production on a larger scale.…”

n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions

“…regarding the efficiency enhancement of GaAsP solar cells or GaAs photodetectors . Despite all the progress made, the full potential of III/V NW axial and radial heterostructures has not been explored and limitations in NW growth, doping, and heterostructure complexity are currently under investigation …”