Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Thin films of ZnO with different thicknesses (ranging from 8 to 40 nm) have been prepared by plasma-enhanced atomic layer deposition. Grazing incidence X-ray diffraction shows the nano-crystalline structure of the films with high degree of disorder. The films have also lattice oxygen and non-lattice oxygen where the film with 20 nm thickness has the highest percentage of the non-lattice oxygen. These films have indirect optical transitions. The energy gap increases slightly with decreasing the film thickness (2.96, 3.03 and 3.16 eV for the thicknesses 40, 20 and 8 nm, respectively). These films have strong photocatalytic activity to treat the water from the organic dyes such as Levafix Brilliant Red. The film with thickness 20 nm has the optimum photocatalytic activity and the lowest contact angle with water. The photoinduced super-hydrophilic nature of ZnO film (20 nm) renders this film suitable for antifogging application. The high photocatalytic activity and super-hydrophilicity are due to the low recombination rate of charge carriers accompanied to the excess of oxygen vacancies and the high degree of structural disorder.

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“…In the low absorption region, the absorption coefficient was analyzed according to Urbach's formula [25,26]:…”

Section: Resultsmentioning

confidence: 99%

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

Shenouda¹,

Saif²,

Baradács³

et al. 2022

Phys. Scr.

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The role of Bi incorporation on the optical dispersion parameters of binary Se–In chalcogenide glass films as encouraging materials for photovoltaic implementations

El-Metwally,

Atyia,

Abdel-Ghafar

et al. 2024

Physica B: Condensed Matter

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Insight on the optoelectronic properties of novel quaternary Ge–Se–Tl–Sb non-crystalline glassy alloy films for optical fiber sensing devices

Ismail,

El-Metwally

2024

Eur. Phys. J. Plus

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Chalcogenide glass (Ge0.1Se0.7Tl0.2)85Sb15 is synthesized in bulk form by the melt quenching method and thermally evaporated as thin films. The amorphous character of the studied films is examined by XRD analysis. The values of refractive index ($$n$$ n ) and extinction index ($$k$$ k ) are estimated from transmittance $$T(\lambda )$$ T ( λ ) data using Swanepoel’s method and are found to be thickness independent. The values of the indirect optical band gap ($${E}_{g}^{{\text{opt}}}$$ E g opt ) and Urbach tail ($${E}_{{\text{U}}}$$ E U ) energies are 1.164 eV and 0.176 eV, respectively. The optical $${\sigma }_{{\text{opt}}}$$ σ opt and electrical $${\sigma }_{{\text{elec}}}$$ σ elec conductivities of (Ge0.1Se0.7Tl0.2)85Sb15 films increase while the penetration depth $${P}_{{\text{d}}}$$ P d decreases with photon energy ($$h\nu$$ h ν ). The Wemple-DiDomenico (WDD) oscillator model calculates optical parameters such as single-oscillator $${E}_{{\text{o}}}$$ E o and strength $${E}_{{\text{d}}}$$ E d energies, lattice dielectric constant $${\varepsilon }_{{\text{L}}}$$ ε L and ratio $${\text{N}}/{{\text{m}}}^{*}$$ N / m ∗ . The calculated values of third-order susceptibility $${\chi }^{(3)}$$ χ ( 3 ) and nonlinear index of refraction $${n}_{2}$$ n 2 are 6.34 × 10–12 and 3.76 × 10–11 $${\text{esu}}$$ esu . Dielectric constant $${\varepsilon }^{\prime}$$ ε ′ and loss $${\varepsilon }^{{\prime}{\prime}}$$ ε ′ ′ decrement with frequency and increment with temperature. The ac conductivity $${\sigma }_{{\text{ac}}}$$ σ ac increases with frequency and temperature, which is proportional to $${\omega }^{s}$$ ω s and the exponent $$s$$ s decreases with temperature. The obtained results of $${\sigma }_{{\text{ac}}}$$ σ ac and $$s$$ s are interpreted via the correlated barrier hopping (CBH) model. Values of the density of localized states $$N\left({E}_{{\text{F}}}\right)$$ N E F are enhanced with frequency and temperature. The results obtained suggest that $${\varepsilon }^{\prime}$$ ε ′ , $${\varepsilon }^{{\prime}{\prime}}$$ ε ′ ′ , $${\sigma }_{{\text{ac}}}$$ σ ac and $$N\left({E}_{{\text{F}}}\right)$$ N E F are improved by decreasing the film thickness. These research results emphasize the composition’s applicability for several optical potential applications, like optical fiber sensing devices, photo-detectors, and narrow band optical filters.

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Impact of Se and Te addition on optical characteristics of ternary GeInSb chalcogenide films as promising materials for optoelectronic applications

Cited by 4 publications

References 59 publications

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

Optimization of the structural and optical properties of ALD grown ZnO thin films for photocatalytic applications: thickness dependence

The role of Bi incorporation on the optical dispersion parameters of binary Se–In chalcogenide glass films as encouraging materials for photovoltaic implementations

Insight on the optoelectronic properties of novel quaternary Ge–Se–Tl–Sb non-crystalline glassy alloy films for optical fiber sensing devices

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