Impact of self-heating effect in hot carrier injection modeling

Recovery of hot-carrier degraded nMOSFETs

“…This will make it harder for the hot-carriers to lose heat, increasing the device temperature. This self-heating effect will increase the degradation rate for BTI and HCI in smaller devices [172,173], however, a higher temperature may also favor a higher recovery rate (see Section 5). The effect on the number of fins in a FinFET on the HCD is studied in [174,175], where is reported that an increase in the number of fins makes it harder to lose the generated heat, i.e.…”