Impact of SiC components on the EMC behaviour of a power electronics converter

Rondon, Eliana; Morel, Florent; Vollaire, Christian; Schanen, Jean‐Luc

doi:10.1109/ecce.2012.6342222

Cited by 16 publications

(5 citation statements)

References 3 publications

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“…Switching losses are reduced about 23%, and the power dissipated in the load is lower for the SiC components as well. However, these components also increase the conducted and radiated electromagnetic emissions because of the conditions of high frequency switching and high commutation speeds (high di/dt and dv/dt) compared to other conventional components in power electronic converters [5]. In [6], experimental comparisons between the SiC JFET and IGBT bridge leg of inverters are presented.…”

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confidence: 99%

Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted Emissions

Rondon-Pinilla

Morel

Vollaire

et al. 2014

IEEE Trans. Power Electron.

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International audienceThe reduced switching times of silicon carbide (SiC) components compared to Si components in similar conditions are a great advantage from the point of view of efficiency, but, due to the high dv/dt and di/dt, conducted electromagnetic emissions are increased. Therefore, the availability of a method which can predict these emissions is increasingly necessary. To the best of the authors' knowledge, a model that can predict differential mode as well as common mode for a converter including sic devices has not yet been published. the novelty of the work presented here is the integration of different modeling approaches to form a circuit model of a SiC-based buck dc-dc converter working in frequency range from 40 Hz to 30 MHz. A modeling approach of the passive parts of the converter is presented. Then, the model obtained is used in simulations to predict the drain-to-source voltage and the drain current for the JFET. Conducted emissions received by the line impedance stabilization network are also computed. Simulation results are compared to measurements for different duty cycles and different gate resistors in the time and frequency domains. A good agreement is obtained. In the frequency domain, in all cases, differences are less than 5 dBμV up to 30 MHz excepted in the JFET source current

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confidence: 99%

Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted Emissions

Rondon-Pinilla

Morel

Vollaire

et al. 2014

IEEE Trans. Power Electron.

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“…then conducted and radiated noises will change. Rise times, fall times and oscillations during the switching process are known to create perturbations in the MHz frequency range [15]. Filtering is not easy at these frequencies and a higher level of perturbations would lead to a more expensive and bulky filter.…”

Section: Discussionmentioning

confidence: 99%

SiC vertical JFET pure diode-less inverter leg

Ouaida

Fonteneau

Dubois

et al. 2013

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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The aim of this paper is to investigate the ability of a vertical structure JFET to operate in an inverter leg without any internal or external diode. The JFET is characterized to show the reverse conduction capability while the gate-to-source voltage is lower than the threshold voltage. An inverter leg is tested at 540 V /5 A and 50 kHz. A specific test board is implemented to assess a safe operation over a period of time.

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“…The fast switching is a solution to decrease the losses This work was supported by a grant overseen by the French National Research Agency (ANR) as part of the "Investissements d'Avenir" Program (ANE-ITE-002-01). in power converters [2], but it faced challenges due to fast variation of the voltage in the mid-point of the half-bridge [3], [4]. SiC technology involves semiconductor material with a larger band-gap energy compared to Si which allows to build devices which are able to block higher voltages.…”

Section: Introductionmentioning

confidence: 99%

Measuring small differential-mode voltages with high common-mode voltages and fast transients – Application to gate drivers for wide band-gap switches

Geramirad

Morel

Lefebvre

et al. 2020

2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE

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In power electronics, gate-voltage measurement is used to optimize the design of the gate driver. Therefore a proper measurement technique is vital to ensure the proper operation of the electronic device. Measuring a small signal in a high switching voltage environment is a complicated task especially for high-side switches in a half-bridge configuration with fast semiconductor devices where voltage probes are subject to high common-mode voltages with fast transients. Hence, this article compares experimentally the conventional differential probes with optically isolated probes for measuring a small signal (26V) with a 1200V common-mode voltage and high switching rates created by SiC MOSFET (30kV/µs). The conventional differential probe shows differences of measured voltage amplitude up to 10V compared to optically isolated probe. The experimental results prove that parasitic elements of conventional differential probes change the gate-voltage shape and increase the common-mode current in the experimental setup up to 6dB.

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Impact of SiC components on the EMC behaviour of a power electronics converter

Cited by 16 publications

References 3 publications

Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted Emissions

Modeling of a Buck Converter With a SiC JFET to Predict EMC Conducted Emissions

SiC vertical JFET pure diode-less inverter leg

Measuring small differential-mode voltages with high common-mode voltages and fast transients – Application to gate drivers for wide band-gap switches

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