Impact of SiN capping during Ohmic Annealing on Performance of GaN-based MISHEMTs

GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

“…During this high thermal budget RTA process, the AlGaN surface was protected by the SiN capping layer, to suppress nitrogen vacancies formation that is deleterious for device operation. 21,22) The SiN cap was subsequently removed by buffered oxide etch solution of BHF and NH 4 F. The samples then were immediately loaded to the quartz tube chamber of a home-made mist-CVD system 23) illustrated in Fig. 1(c) for the deposition of Al 2 O 3 gate insulator.…”