Impact of Single Event Gate Rupture and Latent Defects on Power MOSFETs Switching Operation

Privat, A.; Touboul, Antoine; Petit, Marie-Amélie; Huselstein, Jean-Jacques; Wrobel, Frédéric; Forest, F.; Vaillé, J.-R.; Bourdarie, S.; Arinero, Richard; Chatry, N.; Chaumont, G.; Lorfèvre, E.; Saigné, Frédéric

doi:10.1109/tns.2014.2333542

Cited by 5 publications

(1 citation statement)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Titus et al [ 13 ] reviewed the mechanism of single-event burnout (SEB) and SEGR. Privat et al [ 14 ] investigated the impact of the latent defects on SEGR during switching operations. Recently, more studies have focused on the SEGR hardening technologies, such as the thicker gate oxide at the trench bottom proposed by Ttius et al [ 3 ] and Darwish et al [ 15 ], the W-shaped gate dielectric proposed by [ 16 ], the high-k gate dielectric proposed by X. Wan et al [ 17 ] and A. Javanainen et al [ 18 ], the widened split gate proposed by Jiang Lu et al [ 19 ], the super-junction power MOS proposed by Muthuseenu et al [ 20 ], and so on.…”

Section: Introductionmentioning

confidence: 99%

Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

et al. 2023

View full text Add to dashboard Cite

Single-event gate-rupture (SEGR) in the trench vertical double-diffused power MOSFET (VDMOS) occurs at a critical bias voltage during heavy-ion experiments. Fault analysis demonstrates that the hot spot is located at the termination of the VDMOS, and the gate oxide in the termination region has been damaged. The SEGR-hardened termination with multiple implantation regions is proposed and simulated using the Sentaurus TCAD. The multiple implantation regions are introduced, leading to an increase in the distance between the gate oxide and the hole accumulation region, as well as a decrease in the resistivity of the hole conductive path. This approach is effective in reducing the electric field of the gate oxide to below the calculated critical field, and results in a lower electric field than the conventional termination.

show abstract