Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures

Abstract

The impact of the size distributions of Ge islands on the structural and optical characteristics of anti-reflection structures was investigated. The variation of island size distribution was achieved through the variation of growth temperature in gas-source molecular beam epitaxy at 700 °C-800 °C. Ge islands were utilized as etching masks to form the anti-reflection structures. By using lower growth temperature of 700 °C and subsequent etching, larger texture without many hollows was formed in contrast to that using 800 °C. Broader size distribution of islands formed at 700 °C was found to lead to larger texture size. Smaller texture is formed by smaller islands and short etching, whereas larger texture is formed by erosion of smaller texture during long etching. A potential short-circuit current density of 36.75 mA cm −2 was obtained for the sample by the islands grown at 700 °C with reduced etching margins, comparable to that of conventional pyramid textures.

Nanopyramid Texture Formation by One‐Step Ag‐Assisted Solution Process for High‐Efficiency Monocrystalline Si Solar Cells

“…[15] Ohta et al reported that Si nanopyramids with a size of 400-600 nm can be formed uniformly by using self-assembled Ge islands as etching masks. [16] Similarly, Zhong et al reported that Ag NPs predeposited on Si wafers by a solution process can be used as etching masks for the following alkaline etching process. [17,18] From the industrial DOI: 10.1002/solr.202200707…”

“…[ 15 ] Ohta et al reported that Si nanopyramids with a size of 400–600 nm can be formed uniformly by using self‐assembled Ge islands as etching masks. [ 16 ] Similarly, Zhong et al reported that Ag NPs predeposited on Si wafers by a solution process can be used as etching masks for the following alkaline etching process. [ 17,18 ] From the industrial perspective, however, the etching process should be as simple as possible because the multistep approaches are generally complex and may require additional process equipment.…”

Interdisk spacing effect on resonant properties of Ge disk lattices on Si substrates

“…The efficiency of optoelectronic devices, such as solar cells and photodetectors, depends on their surface properties related to light reflection and transmission 1 , 2 . To reduce reflection, surface texturing and coating with antireflection dielectric films are usually used 3 , 4 . Recently, intensive research has been carried out on coatings of metal and/or dielectric particles as an alternative to continuous antireflection films 5 – 9 .…”

Thickness-dependent surface energy and formation of epitaxial quantum dots

“…In addition, these structures can be applied for modification of surfaces and the formation of coatings [9,10]. They can be used for creation of textured surfaces, anti-reflection coatings [11] and implementation of photonic crystals and microresonators [12], as well as in quantum information technologies [13].…”