Impact of snubber parameters on voltage sharing in series-connected insulated gate bipolar transistors

Son, Myeongsu; Lee, Taeyeong; Kwon, Sang Mo; Cho, Younghoon

doi:10.1007/s43236-020-00094-8

Cited by 2 publications

(3 citation statements)

References 19 publications

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“…In this approach, the value of the snubber capacitance can be selected for maximum voltage sharing [22], minimum power loss of switches [17], maximum lifetime of switches [18], minimum Electromagnetic Interference (EMI) [19], and etc. Electromagnetic Interference (EMI) [19], and etc.…”

Section: Desining the Key Componentsmentioning

confidence: 99%

“…In the traditional scheme for series configuration of switches, one RCD snubber is used for each IGBT [21], [25], and the stored energy in each capacitor is dissipated in the corresponding resistor in the snubber. Increasing the capacitance of the snubbers reduces turn-off switching losses [17] and improves voltage balancing of the series IGBTs [22]. On the other hand, the performance of the RCD snubber is associated with the power dissipation.…”

Section: Introductionmentioning

confidence: 99%

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An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Zarghani

Peyghami

Iannuzzo

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper presents an energy recovery scheme for traditional Resistor-Capacitor-Diode (RCD) snubber in the series-connected configuration of IGBTs. In the series configuration of IGBTs, an RCD snubber is used in parallel to each IGBT to provide a safe operating condition for the IGBTs. In the proposed scheme, by using interconnection diodes, the capacitors of the snubbers are parallelized in the on-state of the IGBTs. Thus, the stored energies in the snubber capacitors are lumped together and transferred to the DC link by using a transformer and a resonant circuit. By using of the proposed method, the capacitor of the snubber can have a higher value. Higher value of the snubber capacitance improve voltage sharing of the IGBTs and reduce the turn-off switching power losses of the IGBTs. The proposed scheme is simulated for a case study using PSPICE software and tested through an experimental setup. Simulation and experimental results imply the proper performance of the proposed scheme.

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Section: Desining the Key Componentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Zarghani

Peyghami

Iannuzzo

et al. 2021

2021 IEEE Energy Conversion Congress and Exposition (ECCE)

View full text Add to dashboard Cite

show abstract

“…As the mainstream device of medium and high voltage converters, insulated gate bipolar transistors (IGBT) are widely used in locomotive traction, ship propulsion, and high voltage direct current transmission systems, and its switching transient process directly affects the stable and reliable operation of the system [1,2]. Especially, the accurate quantitative analysis of the IGBT switching transient process is particularly important in key technologies such as converter circuit design, drive circuit parameter configuration, and electromagnetic compatibility performance design [3,4].…”

Section: Introductionmentioning

confidence: 99%

Modelling and solving of IGBT's transient analysis model based on the finite state machine

Hao

Cheng

et al. 2021

IET Power Electronics

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To accurately obtain the switching characteristics of insulated gate bipolar transistors (IGBT), this paper proposes an IGBT's transient analysis model (TAM) based on the finite state machine (FSM). Firstly, the IGBT switching process in the basic converter unit is segmented in the time domain, and the circuit equations among the variables are obtained based on Kirchhoff's law. Then, the switching mechanism and parameters of the IGBT are decoupled based on time segmentation, and clarifying state equations and the transition events for each stage. Subsequently, all the stages and events are modeled in an FSM, thus establishing the IGBT's TAM, and it was realized the Stateflow toolbox of Matlab/Simulink. Finally, some experiments were performed on IGBTs with different current and voltage. The results show that the TAM can accurately describe the switching characteristics of IGBT and is suitable for different voltage and current levels.

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Impact of snubber parameters on voltage sharing in series-connected insulated gate bipolar transistors

Cited by 2 publications

References 19 publications

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

An Energy Recovery Scheme for RCD Snubber in the Series Configuration of IGBTs

Modelling and solving of IGBT's transient analysis model based on the finite state machine

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